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MQRT100KP110AE3 PDF预览

MQRT100KP110AE3

更新时间： 2024-11-23 19:23:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 132K
描述
Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MQRT100KP110AE3 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.27
Is Samacsys：N最大击穿电压：135 V
最小击穿电压：122 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：100000 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.61 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：110 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MQRT100KP110AE3 数据手册

 浏览型号MQRT100KP110AE3的Datasheet PDF文件第2页浏览型号MQRT100KP110AE3的Datasheet PDF文件第3页浏览型号MQRT100KP110AE3的Datasheet PDF文件第4页 
RT100KP33A thru RT100KP400CA, e3  
Preferred 100 kW Transient Voltage  
Suppressor for AIRCRAFT POWER  
BUS PROTECTION  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
Microsemi’s 100 kW Transient Voltage Suppressors (TVSs) are designed  
for aircraft applications requiring high power transient protection with a  
comparatively small axial-leaded package size. This includes various  
threats such as “Waveform 4” at 6.4/69 µs per RTCA/DO-160E Section 22.  
It is also available with screening in accordance with MIL-PRF-19500 or  
avionics screening as described in the Features section herein. It may also  
be optionally acquired with RoHS Compliant (annealed matte-Tin finish)  
with an e3 suffix added to the part number. Microsemi also offers a broad  
spectrum of other TVSs to meet your needs.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Available in both Unidirectional and Bidirectional  
construction (Bidirectional with CA suffix)  
•
Protection from high power switching transients,  
induced RF, and lightning threats with comparatively  
small package size (0.25 inch diameter)  
•
•
•
•
TVS selection for 33 to 400 V Standoff Voltages (VWM  
Suppresses transients up to 100 kW @ 6.4/69 μs  
Fast response with less than 5 ns turn-on time.  
)
•
•
•
Protection from ESD and EFT per IEC61000-4-2 and  
IEC61000-4-4  
Pin injection protection per RTCA/DO-160E up to  
Level 4 for Waveform 4 (6.4/69 µs) on all devices  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X), surge (3X) in  
each direction, 24 hours HTRB in each direction, and post  
test (VBR and ID)  
Pin injection protection per RTCA/DO-160E up to  
Level 5 for Waveform 4 (6.4/69 µs) on device types  
RT100KP33A or CA up to RT100KP260A or CA  
•
•
Pin injection protection per RTCA/DO-160E up to  
Level 3 for Waveform 5A (40/120 µs) on all devices  
•
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are also available by adding  
MQ, MX, or MV prefixes respectively to part numbers.  
Pin injection protection per RTCA/DO-160E up to  
Level 4 for Waveform 5A (40/120 µs) on device types  
RT100KP33A or CA up to RT100KP64A or CA  
•
•
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B.  
•
Consult Factory for other voltages with similar Peak  
Pulse Power capabilities.  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL & PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 100 kW at 6.4/69 µs  
waveform in Figure 8 (also see figures 1 and 2)  
•
•
•
CASE: Void free transfer molded thermosetting  
epoxy meeting UL94V-O requirements  
FINISH: Tin-Lead or RoHS Compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
Polarity: Cathode marked with band for  
•
•
Impulse repetition rate: 0.005%  
tclamping (0 volts to VBR min): <100 ps theoretical for  
unidirectional and <5 ns for bidirectional  
Operating & storage temperatures: -65oC to +150oC  
unidirectional (no band required for bi-directional)  
•
•
•
MARKING: Manufacturers logo and part number.  
Add prefix MA, MQ, MX, etc., for screened parts.  
Thermal resistance: 17.5C/W junction to lead, or 77.5C/W  
junction to ambient when mounted on FR4 PC board with 4  
mm2 copper pads (1 oz ) and track width 1 mm, length 25  
mm  
Steady-state power dissipation: 7 Watts @ TL = 27.5oC or  
1.61 Watts at TA =25 oC when mounted on FR4 PC Board  
described for thermal resistance above  
•
•
WEIGHT: 1.7 grams (approximate)  
TAPE & REEL option: Standard per EIA-296 for  
axial package (add “TR” suffix to part number)  
•
•
Package dimensions: See last page  
•
•
Forward surge: 250 Amps 8.3 ms half-sine wave for  
unidirectional devices only  
Solder Temperatures: 260oC for 10 s maximum  
Copyright © 2007  
10-03-2007 Rev B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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 		Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, R
MQRT100KP110CAE3TR MICROSEMI

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MQRT100KP110CATR MICROSEMI

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MQRT100KP110CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, R
MQRT100KP110CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, R
MQRT100KP110CTR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, P
MQRT100KP110E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon,

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