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MPSA45(TO-92) PDF预览

MPSA45(TO-92)

更新时间: 2024-11-03 21:00:51
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
4页 97K
描述
Transistor

MPSA45(TO-92) 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.3 A
配置:Single最小直流电流增益 (hFE):40
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):1.5 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSA45(TO-92) 数据手册

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UTCMPSA44/45 NPN EPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE TRANSISTOR  
FEATURES  
*Collector-Emitter voltage:  
VCEO=400V(MPSA44)  
VCEO=350V(MPSA45)  
*Collector current up to 300mA  
*Complement to MPSA94/93  
*Collector Dissipation:  
1
Pc(max)=625mW  
APPLICATION  
*Telephone switching  
TO-92  
*High voltage switch  
1:EMITTER 2:BASE 3:COLLECTOR  
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )  
PARAMETER  
SYMBOL  
RATING  
UNIT  
V
Collector-base voltage  
MPSA44  
MPSA45  
VCBO  
500  
400  
Collector-emitter voltage  
V
MPSA44  
VCEO  
400  
350  
6
625  
1.5  
300  
150  
MPSA45  
Emitter-base voltage  
Collector dissipation(Ta=25°C)  
Collector dissipation(Tc=25°C)  
Collector current  
VEBO  
Pc  
Pc  
Ic  
Tj  
V
mW  
W
mA  
°C  
Junction Temperature  
Storage Temperature  
TSTG  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
MPSA44  
SYMBOL  
BVCBO  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Ic=100µA,IB=0  
500  
400  
V
MPSA45  
Collector-emitter breakdown voltage  
BVCEO  
Ic=1mA,IB=0  
MPSA44  
400  
350  
6
V
MPSA45  
Emitter-base breakdown voltage  
Collector cut-off current  
MPSA44  
BVEBO  
ICBO  
IE=100µA,Ic=0  
V
µA  
VCB=400V,IE=0  
VCB=320V,IE=0  
0.1  
0.1  
MPSA45  
1
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R201-018,A  

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