Datasheet > MPSA45(SOT-89)

MPSA45(SOT-89)

更新时间： 2024-11-03 14:43:43

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	79K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MPSA45(SOT-89) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.3 A
配置：	Single	最小直流电流增益 (hFE)：	40
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.625 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	50 MHz
Base Number Matches：	1

MPSA45(SOT-89) 数据手册

UTCMPSA44/45 NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

FEATURES

*Collector-Emitter voltage:

VCEO=400V(MPSA44)

VCEO=350V(MPSA45)

*Collector current up to 300mA

*Complement to MPSA94/93

*Collector Dissipation:

Pc(max)=625mW

APPLICATION

*Telephone switching

*High voltage switch

SOT-89

1:EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS _{( Operating temperature range applies unless otherwise specified )}

PARAMETER

Collector-base voltage

SYMBOL

RATING

UNIT

MPSA44

VCBO

500

400

MPSA45

Collector-emitter voltage

MPSA44

VCEO

400

350

625

1.5

300

150

MPSA45

Emitter-base voltage

Collector dissipation(Ta=25°C)

Collector dissipation(Tc=25°C)

Collector current

Junction Temperature

Storage Temperature

VEBO

°C

TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS _{(Tj=25°C,unless otherwise specified)}

PARAMETER

Collector-base breakdown voltage

MPSA44

SYMBOL

BVCBO

TEST CONDITIONS

MIN TYP MAX UNIT

Ic=100µA,IB=0

500

400

MPSA45

Collector-emitter breakdown voltage

BVCEO

Ic=1mA,IB=0

MPSA44

400

350

MPSA45

Emitter-base breakdown voltage

Collector cut-off current

MPSA44

BVEBO

ICBO

IE=100µA,Ic=0

µA

VCB=400V,IE=0

VCB=320V,IE=0

0.1

MPSA45

Collector cut-off current

ICES

µA

MPSA44

VCE=400V,IB=0

VCE=320V,IB=0

0.5

MPSA45

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R208-006,A

12 3

中文翻译

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