Datasheet > MPSA42

MPSA42

更新时间： 2024-11-12 10:48:47

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描述
NPN EPITACIAL PLANAR TRANSISTOR

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数据手册

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MPSA42 数据手册

TIGER ELECTRONIC CO.,LTD

MPSA42

NPN EPITACIAL PLANAR TRANSISTOR

Description

The A42 is high voltage transistor.

Features

• High Collector-Emitter Breakdown Voltage

• Low Collector-Emitter Saturation Voltage.

• For Complementary Use with PNP Type A92.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................... -55~+150°C

Junction Temperature ..................................................................................... +150°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 300 V

VCEO Collector to Emitter Voltage .................................................................................... 300 V

VEBO Emitter to Base Voltage .............................................................................................. 6 V

IC Collector Current........................................................................................................ 500 mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=260V, IE=0

VEB=6V, IC=0

IC=20mA, IB=2mA

IC=1mA, VCE=10V

IC=10mA, VCE=10V

IC=30mA, VCE=10V

300

100

350

900

IEBO

VCE(sat)

VBE(sat)

hFE1

hFE2

hFE3

Cob

MHz IC=10mA, VCE=20V, f=100MHZ

VCB=20V, f=1MHz, IE=0

Classification Of Rank

Rank

hFE1

>80

>25

hFE2

>120

>40

hFE3

>120

>40

VCE(sat)

<200mV

<350mV

TIGER ELECTRONIC CO.,LTD

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中文翻译

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与MPSA42相关器件

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