Datasheet > MPSA42(SOT-89)

MPSA42(SOT-89)

更新时间： 2024-11-02 14:53:55

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	74K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MPSA42(SOT-89) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	50 MHz
Base Number Matches：	1

MPSA42(SOT-89) 数据手册

UTCMPSA42/43 NPNEPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

DESCRIPTION

The UTC MPSA42/43 are high voltage transistors,

designed for telephone switch and high voltage

switch.

FEATURES

*Collector-Emitter voltage:

VCEO=300V(UTC MPSA42)

VCEO=200V(UTC MPSA43)

*High current gain

SOT-89

*Complement to UTC MPSA92/93

*Collector Dissipation:

Pc(max)=625mW

1:EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)

PARAMETER

Collector-Base Voltage

UTC MPSA42

UTC MPSA43

Collector-Emitter Voltage

SYMBOL

VALUE

UNIT

VCBO

300

200

UTC MPSA42

VCEO

300

200

UTC MPSA43

Emitter-Base Voltage

Collector Current

Collector Dissipation (Ta=25℃)

VEBO

500

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS ^{(Tj=25°C, unless otherwise specified)}

PARAMETER

Collector-Base Breakdown Voltage

UTC MPSA42

SYMBOL

BVCBO

TEST CONDITIONS

Ic=100µA, IE=0

MIN TYP MAX UNIT

300

200

UTC MPSA43

Collector-Emitter Breakdown Voltage

BVCEO

Ic=1mA, IB=0

UTC MPSA42

300

200

UTC MPSA43

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

UTC MPSA42

BVEBO

ICBO

IE=100µA, Ic=0

VCB=200V, IE=0

VCB=160V, IE=0

100

UTC MPSA43

Emitter Cut-Off Current

IEBO

UTC MPSA42

VBE=6V, Ic=0

VBE=4V, Ic=0

100

UTC MPSA43

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R208-034,A

12 3

中文翻译

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