Datasheet > MPSA29_01

MPSA29_01

更新时间： 2024-11-12 04:06:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管
页数	文件大小	规格书
7页	295K
描述
NPN Darlington Transistor

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MPSA29_01 数据手册

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MPSA29

TO-92

NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at collector currents to 500 mA. Sourced

from Process 03. See MPSA28 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

100

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

800

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA29

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

mW/ C

R_θ

Thermal Resistance, Junction to Case

83.3

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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