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MPSA14 PDF预览

MPSA14

更新时间: 2024-11-23 22:51:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 58K
描述
NPN Darlington Transistor

MPSA14 数据手册

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Discr ete P OWER & Sign a l  
Tech n ologies  
MPSA14  
MMBTA14  
PZTA14  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 1N  
B
SOT-223  
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely  
high current gain at collector currents to 1.0 A. Sourced from  
Process 05.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
30  
V
V
V
A
30  
10  
Collector Current - Continuous  
1.2  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA14  
*MMBTA14  
**PZTA14  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
1,000  
8.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  
A14, Rev B  

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