Datasheet > MPSA14(SOT-89)

MPSA14(SOT-89)

更新时间： 2024-11-11 21:21:43

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
2页	51K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MPSA14(SOT-89) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	20000	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	125 MHz	Base Number Matches：	1

MPSA14(SOT-89) 数据手册

UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR

DARLINGTON TRANSISTOR

DESCRIPTION

The UTC MPSA14 is a Darlington transistor.

FEATURES

*Collector-Emitter Voltage: VCES = 30V

*Collector Dissipation: Pc (mas) = 625 mW

SOT-89

1: EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS ^{(Operating temperature range applies unless otherwise specified.)}

PARAMETER

SYMBOL

VCBO

VCES

VEBO

TSTG

VALUE

625

500

150

-55 ~ +150

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation (Tc=25°C)

Collector Current

Junction Temperature

Storage Temperature

°C

ELECTRICAL CHARACTERISTICS ^{(Tj=25°C, unless otherwise specified)}

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cut-Off Current

SYMBOL

BVCES

ICBO

TEST CONDITIONS

Ic=100µA,IB=0

MIN MAX UNIT

20000

125

VCB=30V,IE=0

VEB=10V,Ic=0

100

Emitter Cut-Off Current

IEBO

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter on Voltage

hFE

VCE=5V,Ic=100mA

Ic=100mA,IB=0.1mA

VCE=5V,Ic=100mA

VCE=5V,Ic=10mA,

f=100MHz

VCE(sat)

VBE(on)

1.5

2.0

MHz

Current Gain Bandwidth Product

Pulse test: Pulse Width<300µs, Duty Cycle=2%

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R208-008,A

中文翻译

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