Datasheet > MPS8550_10

MPS8550_10

更新时间： 2024-11-21 10:48:51

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	48K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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MPS8550_10 数据手册

SEMICONDUCTOR

MPS8550

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

FEATURE

· Complementary to MPS8050.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-40

UNIT

1.00

1.27

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

0.85

0.45

14.00 +0.50

-25

0.55 MAX

2.30

-6

0.45 MAX

1.00

Collector Current

-1.5

625

1. EMITTER

2. BASE

P_C*

Collector Power Dissipation

400

3. COLLECTOR

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature Range

-55∼ 150

TO-92

*Cu Lead-Frame : 625mW

Fe Lead-Frame : 400mW

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

I_EBO

V_(BR)CBO

TEST CONDITION

MIN.

TYP.

MAX. UNIT

V_CB=-35V, I_E=0

-100

V_EB=-6V, I_C=0

Emitter Cut-off Current

-100

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

I_C=-100μA, I_E=0

-40

-25

V_(BR)CEO

h_FE(1)

h_FE(2) (Note)

h_FE(3)

V_CE(sat)

V_BE(sat)

V_BE

I_C=-2mA, I_B=0

V_CE=-1V, I_C=-5mA

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

I_C=-800mA, I_B=-80mA

V_CE=-1V, I_C=-10mA

V_CE=-10V, I_C=-50mA

V_CB=-10V, f=1MHz, I_E=0

170

160

DC Current Gain

300

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

-0.28

-0.98

-0.66

200

-0.5

-1.2

-1.0

f_T

Transition Frequency

100

MHz

C_ob

Collector Output Capacitance

Note : h_FE(2) Classification B:85∼ 160 , C : 120∼ 200 , D : 160∼ 300

2010. 6. 10

Revision No : 3

1/2

中文翻译

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