Datasheet > MPS8550SC

MPS8550SC

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	548K
描述
SOT-23(1)

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中文翻译

获取价格

技术参数
数据手册

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MPS8550SC 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

MPS8550SC 数据手册

SEMICONDUCTOR

MPS8550SC

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

FEATURE

· Complementary to MPS8050SC.

DIM MILLIMETERS

2.90 0.1

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-40

UNIT

0.10

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

0.00 ~ 0.10

0.55

-25

0.20 MIN

1.00+0.20/-0.10

-5

Collector Current

-1,200

350

℃

1. EMITTER

2. BASE

P_C*

Collector Power Dissipation

Junction Temperature

T_j

150

3. COLLECTOR

T_stg

Storage Temperature Range

-55∼ 150

℃

* P_C: Package Mounted On 99.5% Alumina (10×8×0.6㎜)

SOT-23(1)

Marking

Lot No.

Type Name

CBL

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

SYMBOL

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

TEST CONDITION

MIN.

-40

-25

-5

TYP.

MAX.

UNIT

I_C=-0.1mA, I_E=0

I_C=-1mA, I_B=0

I_E=-0.1mA, I_C=0

V_CB=-35V, I_E=0

-0.1

0.1

300

-0.5

-1.2

I_EBO

V_EB=-4V, I_C=0

Emitter Cut-off Current

h_FE(Note)

V_CE(sat)

V_BE(sat)

f_T

V_CE=-1V, I_C=-100mA

I_C=-800mA, I_B=-80mA

V_CE=-6V, I_C=-20mA, f=30MHz

DC Current Gain

150

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

150

MHz

Note) : h_FEClassification D:150~300

2015. 9. 30

Revision No : 1

1/2

中文翻译

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