Datasheet > MPS6521-D26Z

MPS6521-D26Z

更新时间： 2024-11-10 14:53:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	25K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MPS6521-D26Z 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	300
JESD-609代码：	e3	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Matte Tin (Sn)	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

MPS6521-D26Z 数据手册

MPS6521

NPN General Purpose Amplifier

•

This device is deisgned for general purpose amplifier applications at

collector to 300mA.

•

Sourced from process 10.

TO-92

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

CEO

CBO

EBO

4.0

- Continuous

100

°C

T , T

Operating and Storage Junction Temperature Range

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Collector-Emitter Sustaining Voltage *

Emitter-Base Breakdown Voltage

Emitter Cutoff Current

= 500µA, I = 0

(BR)CEO

(BR)EBO

CBO

= 10µA, I = 0

= 30V, I = 0

On Characteristics

DC Current Gain

= 10V, I = 100µA

150

300

= 10V, I = 2.0mA

600

0.5

(sat)

Collector-Emitter Saturation Voltage

= 50mA, I = 5.0mA

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Max.

Units

mW/°C

Total Device Dissipation

625

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

83.3

200

°C/W

θJC

θJA

°C/W

Rev. A, November 2003

12 3

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