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MPS6521G PDF预览

MPS6521G

更新时间: 2024-11-08 04:14:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
11页 167K
描述
Amplifier Transistors

MPS6521G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:LEAD FREE, CASE 29-11, TO-226, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:1 week
风险等级:5.09Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):300JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):340 MHzBase Number Matches:1

MPS6521G 数据手册

 浏览型号MPS6521G的Datasheet PDF文件第2页浏览型号MPS6521G的Datasheet PDF文件第3页浏览型号MPS6521G的Datasheet PDF文件第4页浏览型号MPS6521G的Datasheet PDF文件第5页浏览型号MPS6521G的Datasheet PDF文件第6页浏览型号MPS6521G的Datasheet PDF文件第7页 
MPS6521 (NPN)  
MPS6523 (PNP)  
MPS6521 is a Preferred Device  
Amplifier Transistors  
Features  
Voltage and Current are Negative for PNP Transistors  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
3
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol NPN PNP  
Unit  
2
BASE  
2
BASE  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MPS6521  
MPS6523  
25  
25  
1
EMITTER  
1
EMITTER  
CollectorBase Voltage  
Vdc  
MPS6521  
MPS6523  
40  
25  
EmitterBase Voltage  
4.0  
Vdc  
MARKING  
DIAGRAM  
Collector Current − Continuous  
I
100  
mAdc  
C
Total Device Dissipation @ T = 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
Derate above 25°C  
MPS  
652x  
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
Derate above 25°C  
AYWW G  
TO−92  
CASE 29−11  
STYLE 1  
G
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Ambient  
(Printed Circuit Board Mounting)  
R
q
JA  
200  
°C/W  
MPS652x = Device Code  
x = 1 or 3  
A
Y
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Thermal Resistance, Junction−to−Case  
R
83.3  
°C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
WW  
G
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPS6521  
TO−92  
5000 Units/Box  
5000 Units/Box  
MPS6521G  
TO−92  
(Pb−Free)  
MPS6521RLRA  
TO−92  
2000/Tape & Reel  
2000/Tape & Reel  
MPS6521RLRAG  
TO−92  
(Pb−Free)  
MPS6523  
TO−92  
5000 Units/Box  
5000 Units/Box  
MPS6523G  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 3  
MPS6521/D  

MPS6521G 替代型号

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Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
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MPS6521RLRAG ONSEMI

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MPS6521-STYLE-C ALLEGRO

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Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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TRANSISTOR 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP G
MPS6521TRA CENTRAL

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Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6521TRB CENTRAL

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Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6521TRC CENTRAL

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Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6521TRE CENTRAL

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Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,