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MPS6514

更新时间： 2024-11-07 22:46:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
3页 49K
描述
NPN General Purpose Amplifier

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中文翻译

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MPS6514 数据手册

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MPS6514  
NPN General Purpose Amplifier  
•
This device is designed as a general purpose  
amplifier and switch.  
•
The useful dynamic range extends to 100mA as a  
switch and to 100MHz as an amplifier.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
25  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector current  
CEO  
40  
V
CBO  
EBO  
4.0  
V
I
- Continuous  
200  
mA  
°C  
C
T , T  
Junction and Storage Temperature  
-55 ~ +150  
J
stg  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 0.5mA, I = 0  
25  
40  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
C
B
=10µA, I = 0  
E
= 10µA, I = 0  
4.0  
V
C
I
I
V
V
= 30V, I = 0  
50  
nA  
µA  
CE  
CB  
E
Collector Cutoff Current  
= 30V, I = 0, T = 100°C  
1.0  
CBO  
E
On Characteristics *  
h
DC Current Gain  
I
I
= 2.0mA, V = 10V  
150  
90  
300  
0.5  
FE  
C
C
CE  
= 100mA, V = 10V  
CE  
V
Collector-Emitter Saturation Voltage  
I
= 50mA, I = 5.0mA  
V
CE(sat)  
C
B
Small Signal Characteristics  
Output Capacitance  
C
V
= 10V, I = 0, f = 100kHz  
3.5  
pF  
obo  
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
CB  
E
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
θJC  
θJA  
©2004 Fairchild Semiconductor Corporation  
Rev. A, May 2004  
123

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MPS6514 替代型号

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MPS6514/D10Z TI

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 		100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6514/D10Z(OPTION18) TI

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 		Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6514/D10Z(OPTION5) TI

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 		Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6514/D10Z{OPTION18} TI

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 		100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6514/D11Z(OPTION5) TI

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 		Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6514/D11Z{OPTION5} TI

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 		100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6514/D26Z TI

获取价格

 		100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6514/D26Z(OPTION18) TI

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 		Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6514/D26Z(OPTION5) TI

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6514/D26Z{OPTION18} TI

获取价格

 		100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

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