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ZTX601 PDF预览

ZTX601

更新时间: 2024-11-10 07:42:51
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页数 文件大小 规格书
3页 75K
描述
NPN SILICON PLANAR MEDIUM POWER

ZTX601 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-92
包装说明:IN-LINE, R-PSIP-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:15 weeks
风险等级:6.89最大集电极电流 (IC):1 A
集电极-发射极最大电压:160 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JESD-30 代码:R-PSIP-W3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

ZTX601 数据手册

 浏览型号ZTX601的Datasheet PDF文件第2页浏览型号ZTX601的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTORS  
ISSUE 2 – JUNE 94  
ZTX600  
ZTX601  
FEATURES  
*
*
*
*
160 Volt VCEO  
1 Amp continuous current  
Gain of 5K at IC=1 Amp  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX600  
160  
ZTX601  
180  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
140  
160  
10  
4
Peak Pulse Current  
Continuous Collector Current  
IC  
1
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
ZTX600  
ZTX601  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO 160  
V(BR)CEO 140  
V(BR)EBO 10  
ICBO  
180  
160  
10  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
0.01  
10  
V
CB=140V  
VCB=160V  
CB=140V,T =100°C  
µA  
µA  
µA  
µA  
0.01  
V
10  
VCB=160V,T =100°C  
Emitter Cut-Off  
Current  
IEBO  
0.1  
10  
0.1  
VEB=8V  
µA  
Colllector-Emitter  
Cut-Off Current  
ICES  
VCES=140V  
VCES=160V  
µA  
µA  
10  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
0.75 1.1  
0.85 1.2  
0.75 1.1  
0.85 1.2  
V
V
IC=0.5A, IB=5mA*  
IC=1A, IB=10mA*  
Base-Emitter  
Saturation Voltage  
1.7  
1.9  
1.7  
1.9  
V
IC=1A, IB=10mA*  
Base-Emitter  
Turn-On Voltage  
1.5  
1.7  
1.5  
1.7  
V
IC=1A, VCE=5V*  
3-206  

ZTX601 替代型号

型号 品牌 替代类型 描述 数据表
ZTX690BSTZ DIODES

类似代替

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ZTX690B DIODES

类似代替

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ZTX749 DIODES

类似代替

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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ZTX601ASTOB DIODES

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