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MPS6428 PDF预览

MPS6428

更新时间: 2024-11-20 22:46:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
4页 61K
描述
Amplifier Transistor(NPN Silicon)

MPS6428 数据手册

 浏览型号MPS6428的Datasheet PDF文件第2页浏览型号MPS6428的Datasheet PDF文件第3页浏览型号MPS6428的Datasheet PDF文件第4页 
Order this document  
by MPS6428/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
1
2
3
EMITTER  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
50  
60  
Vdc  
6.0  
200  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
V
50  
60  
Vdc  
Vdc  
A
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 0.1 mAdc, I = 0)  
(BR)CBO  
C
E
Collector Cutoff Current  
(V = 30 Vdc)  
I
0.025  
0.01  
0.01  
CES  
CE  
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
A
CBO  
CB  
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
E
I
A
EBO  
EB  
C
Motorola, Inc. 1996

MPS6428 替代型号

型号 品牌 替代类型 描述 数据表
2N5088RLRA ONSEMI

功能相似

50mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN
2N5088RLRAG ONSEMI

功能相似

TRANSISTOR 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO

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暂无描述
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