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MPF990ZL1 PDF预览

MPF990ZL1

更新时间: 2024-11-06 19:50:43
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
34页 317K
描述
TRANSISTOR 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AE, 3 PIN, FET General Purpose Small Signal

MPF990ZL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.26其他特性:EUROPEAN PART NUMBER
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:90 V
最大漏极电流 (ID):2 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MPF990ZL1 数据手册

 浏览型号MPF990ZL1的Datasheet PDF文件第2页浏览型号MPF990ZL1的Datasheet PDF文件第3页浏览型号MPF990ZL1的Datasheet PDF文件第4页浏览型号MPF990ZL1的Datasheet PDF文件第5页浏览型号MPF990ZL1的Datasheet PDF文件第6页浏览型号MPF990ZL1的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
N–Channel — Enhancement  
3 DRAIN  
2
GATE  
1 SOURCE  
MAXIMUM RATINGS  
Rating  
DrainSource Voltage  
DrainGate Voltage  
Symbol  
MPF930  
35  
MPF960  
60  
MPF990  
Unit  
Vdc  
Vdc  
V
DS  
90  
90  
V
DG  
35  
60  
1
2
3
Gate–Source Voltage  
— Continuous  
— Non–repetitive (t 50 µs)  
V
±20  
±40  
Vdc  
Vpk  
GS  
CASE 29–05, STYLE 22  
TO–92 (TO–226AE)  
V
GSM  
p
Drain Current  
Adc  
(1)  
Continuous  
(2)  
I
2.0  
3.0  
D
Pulsed  
I
DM  
Total Device Dissipation  
P
D
@ T = 25°C  
1.0  
8.0  
Watts  
mW/°C  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to 150  
°C  
Thermal Resistance  
θ
125  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain–Source Breakdown Voltage  
V
Vdc  
(BR)DSX  
(V  
GS  
= 0, I = 10 µAdc)  
MPF930  
MPF960  
MPF990  
35  
60  
90  
D
Gate Reverse Current (V  
GS  
= 15 Vdc, V  
= 0)  
I
50  
nAdc  
DS  
GSS  
(2)  
ON CHARACTERISTICS  
Zero–Gate–Voltage Drain Current  
(V = Maximum Rating, V  
I
10  
µAdc  
Vdc  
DSS  
= 0)  
DS GS  
Gate Threshold Voltage  
(I = 1.0 mAdc, V  
V
1.0  
3.5  
GS(Th)  
= V  
)
D
DS  
GS  
Drain–Source On–Voltage (V  
(I = 0.5 Adc)  
D
= 10 Vdc)  
V
Vdc  
GS  
DS(on)  
MPF930  
MPF960  
MPF990  
0.4  
0.6  
0.6  
0.7  
0.8  
1.2  
(I = 1.0 Adc)  
D
MPF930  
MPF960  
MPF990  
0.9  
1.2  
1.2  
1.4  
1.7  
2.4  
(I = 2.0 Adc)  
D
MPF930  
MPF960  
MPF990  
2.2  
2.8  
2.8  
3.0  
3.5  
4.8  
1. The Power Dissipation of the package may result in a lower continuous drain current.  
2. Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2.0%.  
REV 2  
4–90  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  

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