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MP1008 PDF预览

MP1008

更新时间: 2024-02-14 12:01:37
品牌 Logo 应用领域
上华 - COMCHIP 二极管局域网
页数 文件大小 规格书
2页 38K
描述
Silicon Bridge Rectifiers

MP1008 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PUFM-W4Reach Compliance Code:compliant
风险等级:5.67Is Samacsys:N
其他特性:UL APPROVED最小击穿电压:800 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PUFM-W4
最大非重复峰值正向电流:300 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:800 V
表面贴装:NO端子形式:WIRE
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MP1008 数据手册

 浏览型号MP1008的Datasheet PDF文件第2页 
Silicon Bridge Rectifiers  
CCOOMMCCHHIIPP  
www.comchiptech.com  
MP1000 Thru 1010  
Reverse Voltage: 50 - 1000 Volts  
Forward Current: 10 Amp  
Features  
- Diffused Junction  
- High Current Capability  
- High Case Dielectric Strength  
- High Surge Current Capability  
- Ideal for Printed Circuit Board Application  
- Plastic Material has Underwriters  
Laboratory Flammability Classification  
94V-O  
MP-10  
H
J
MP-10  
Min  
+
~
-
G
Dim  
A
Max  
15.75  
6.90  
-
14.73  
5.80  
A
B
E
C
19.00  
~
D
1.00 Ø Typical  
5.11 6.14  
Hole for # 6 screw  
Mechanical Data  
- Case: Molded Plastic  
E
E
G
- Terminals: Plated Leads Solderable per MIL  
STD-202, Method 208  
D
3.60  
4.00  
C
B
H
J
10.30  
11.30  
2.38 x 45oC Typical  
- Weight: 5.4 grams (approx.)  
- Mounting Position: Through Hole for #6  
Screw  
All Dimensions in mm  
Metal Heat Sink  
- Mounting Torque: 5.0 Inch-pounds Maximum  
Maximum Ratings and Electrical Characterics  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MP  
MP  
MP  
MP  
MP  
MP  
MP  
CHARACTERISTICS  
Peak Repetitive Reverse Voltage  
Symbol  
UNIT  
1000 1001 1002 1004 1006 1008 1010  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800 1000  
560 700  
V
Working Peak Reverse Voltage  
DC Blocking Voltage  
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
10  
V
A
Average Rectified Output Current (Note1) @ TA = 50°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
200  
A
Forward Voltage (per element) @IF = 5.0A  
VFM  
IR  
1.1  
10  
1.0  
V
Peak Reverse Current  
@TC = 25°C  
uA  
mA  
A2s  
pF  
At Rated DC Blocking Voltage @TC = 100°C  
I2t Rating for Fusing (t < 8.3ms) (Note2)  
Typical Junction Capacitance (Note3)  
I2t  
Cj  
64  
110  
7.5  
R
Typical Thermal Resistance (Note4)  
K/W  
°C  
JC  
Tj, TSTG  
-65 to +150  
Operating and Storage Temperature Range  
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.  
2. Thermal resistance junction to ambient mounted on PC board with 13.0 x 13.0 x 0.03mm thick land areas.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
4. Thermal resistance junction to case per element.  
Page 1  
MDS0309003A  

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