Datasheet > MOSFET-1000V

MOSFET-1000V

更新时间： 2023-12-06 20:01:34

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
4页	68K
描述
Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode power trans

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MOSFET-1000V 数据手册

APT1001RBVR

1000V 11A 1.000Ω

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

TO-247

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Popular TO-247 Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT1001RBVR

UNIT

V_DSS

I_D

Drain-Source Voltage

1000

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

280

P_D

2.24

-55 to 150

300

W/°C

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

1000

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

1.00

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

µA

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1.0mA)

250

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

12 3 4

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与MOSFET-1000V相关器件

型号	品牌	获取价格	描述	数据表
MOSFET-100V	MICROCHIP	获取价格	Power MOS V? can still provide the best trade-off between performance andcost in some appl
MOSFET-1200V	MICROCHIP	获取价格	Power MOS 7?is a family of low loss, high voltage, N-Channelenhancement mode power MOSF
MOSFET-200V	MICROCHIP	获取价格	Power MOS 7? is a family of low loss, high voltage, N-Channel enhancementmode power MOSFET
MOSFET-300V	MICROCHIP	获取价格	Power MOS 7? is a family of low loss, high voltage, N-Channel enhancementmode power MOSFET
MOSFET-400V	MICROCHIP	获取价格	Power MOS 7? is a family of low loss, high voltage, N-Channel enhancement mode power MOSFE
MOSFET-500V	MICROCHIP	获取价格	Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode pow
MOSFET-600V	MICROCHIP	获取价格	Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode pow
MOSFET-800V	MICROCHIP	获取价格	Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode pow
MOSFETIRF6602	INFINEON	获取价格	DirectFET⑩ Power MOSFET(Vdss=20V)
MOSFET-LINEAR-1000V	MICROCHIP	获取价格	What is a Linear MOSFET?A MOSFET specifically designed to be more robust than a standard M

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