Datasheet > MOSFET-1200V

MOSFET-1200V

更新时间： 2024-09-26 14:53:27

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
4页	1493K
描述
Power MOS 7?is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS.

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MOSFET-1200V 数据手册

APT12057B2LL(G)

APT12057LLL(G)

1200V 22A 0.570Ω

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

B2LL

POWER MOS 7 MOSFET

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

T-MAX™

TO-264

LLL

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg

MAXIMUM RATINGS

• Popular T-MAX™ or TO-264 Package

All Ratings: T = 25°C unless otherwise specified.

APT12057(G)

UNIT

Symbol Parameter

V_DSS

I_D

Drain-Source Voltage

1200

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

690

Watts

W/°C

P_D

5.52

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1200

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.570

100

500

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

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与MOSFET-1200V相关器件

型号	品牌	获取价格	描述	数据表
MOSFET-200V	MICROCHIP	获取价格	Power MOS 7? is a family of low loss, high voltage, N-Channel enhancementmode power MOSFET
MOSFET-300V	MICROCHIP	获取价格	Power MOS 7? is a family of low loss, high voltage, N-Channel enhancementmode power MOSFET
MOSFET-400V	MICROCHIP	获取价格	Power MOS 7? is a family of low loss, high voltage, N-Channel enhancement mode power MOSFE
MOSFET-500V	MICROCHIP	获取价格	Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode pow
MOSFET-600V	MICROCHIP	获取价格	Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode pow
MOSFET-800V	MICROCHIP	获取价格	Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode pow
MOSFETIRF6602	INFINEON	获取价格	DirectFET⑩ Power MOSFET(Vdss=20V)
MOSFET-LINEAR-1000V	MICROCHIP	获取价格	What is a Linear MOSFET?A MOSFET specifically designed to be more robust than a standard M
MOSFET-LINEAR-500V	MICROCHIP	获取价格	What is a Linear MOSFET?A MOSFET specifically designed to be more robust than a standard M
MOSFET-LINEAR-600V	MICROCHIP	获取价格	What is a Linear MOSFET?A MOSFET specifically designed to be more robust than a standard M

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