Datasheet > MOSFET-600V

MOSFET-600V

更新时间： 2023-12-06 20:01:18

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
4页	214K
描述
Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode power trans

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MOSFET-600V 数据手册

APT30M60J

600V, 31A, 0.15Ω Max

N-Channel MOSFET

Power MOS 8^™is a high speed, high voltage N-channel switch-mode power MOSFET.

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

switching loss is achieved with low input capacitance and ultra low C_rss"Miller" capaci-

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in ﬂyback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

-2

"UL Recognized"

file # E145592

IS OTO P ^®

APT30M60J

Single die MOSFET

FEATURES

TYPICAL APPLICATIONS

• PFC and other boost converter

• Fast switching with low EMI/RFI

• Buck converter

• Low R_DS(on)

• Two switch forward (asymmetrical bridge)

• Single switch forward

• Flyback

• Ultra low C_rssfor improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

• Inverters

Absolute Maximum Ratings

Symbol Parameter

Unit

Ratings

Continuous Drain Current @ T_C= 25°C

I_D

Continuous Drain Current @ T_C= 100°C

Pulsed Drain Current ¹

I_DM

V_GS

E_AS

I_AR

160

±30

1200

Gate-Source Voltage

Single Pulse Avalanche Energy ²

Avalanche Current, Repetitive or Non-Repetitive

Thermal and Mechanical Characteristics

Symbol Characteristic

Min

Typ

Max

355

Unit

P_D

Total Power Dissipation @ T_C= 25°C

R_θJC

Junction to Case Thermal Resistance

0.35

°C/W

R_θCS

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)

0.15

T_J,T_STG

V_Isolation

°C

-55

150

2500

1.03

29.2

W_T

Package Weight

in·lbf

N·m

Torque

Terminals and Mounting Screws.

1.1

Microsemi Website - http://www.microsemi.com

12 3 4

中文翻译

下载PDF

与MOSFET-600V相关器件

型号	品牌	获取价格	描述	数据表
MOSFET-800V	MICROCHIP	获取价格	Power MOS 8? is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode pow
MOSFETIRF6602	INFINEON	获取价格	DirectFET⑩ Power MOSFET(Vdss=20V)
MOSFET-LINEAR-1000V	MICROCHIP	获取价格	What is a Linear MOSFET?A MOSFET specifically designed to be more robust than a standard M
MOSFET-LINEAR-500V	MICROCHIP	获取价格	What is a Linear MOSFET?A MOSFET specifically designed to be more robust than a standard M
MOSFET-LINEAR-600V	MICROCHIP	获取价格	What is a Linear MOSFET?A MOSFET specifically designed to be more robust than a standard M
MOSX1	KOA	获取价格	RESISTOR, METAL OXIDE FILM, 1W, 1; 2; 5%, 300ppm, 0.1ohm - 9.1ohm, THROUGH HOLE MOUNT, AXI
MOSX1/2CGT1R30F	KOA	获取价格	Fixed Resistor, Metal Oxide Film, 0.5W, 1.3ohm, 1% +/-Tol, -300,300ppm/Cel,
MOSX1/2CGTA2R4J	KOA	获取价格	Fixed Resistor, Metal Oxide Film, 0.5W, 2.4ohm, 5% +/-Tol, 300ppm/Cel, Through Hole Mount,
MOSX1/2CGTA5R62F	KOA	获取价格	Fixed Resistor, Metal Oxide Film, 0.5W, 5.62ohm, 1% +/-Tol, 300ppm/Cel, Through Hole Mount
MOSX1/2CGTAR33G	KOA	获取价格	Fixed Resistor, Metal Oxide Film, 0.5W, 0.33ohm, 2% +/-Tol, 300ppm/Cel, Through Hole Mount

与MOSFET-600V相关文章

压敏电阻与气体放电管串联使用的专业解析
2024-07-01

2
手册解读：MMBT3904参数与管脚图及代换
2024-07-01

1
74LS298PC手册解读：参数说明、引脚说明、替代型号推荐
2024-07-01

2
L6234手册解读：引脚信息、电气参数
2024-07-01

1

产品中心

服务支持

精选活动

关于我们

帮助中心

MOSFET-600V

MOSFET-600V 数据手册

与MOSFET-600V相关器件

与MOSFET-600V相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MOSFET-600V

MOSFET-600V 数据手册

与MOSFET-600V相关器件

与MOSFET-600V相关文章

您还可以找

您在本页遇到什么问题？