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MMUN2133LT1 PDF预览

MMUN2133LT1

更新时间： 2024-02-20 00:56:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
10页 269K
描述
PNP SILICON BIAS RESISTOR TRANSISTOR

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中文翻译

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MMUN2133LT1 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SOT-23包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：0.93
Samacsys Confidence：2Samacsys Status：Released
Samacsys PartID：412127Samacsys Pin Count：3
Samacsys Part Category：Transistor BJT PNPSamacsys Package Category：SOT23 (3-Pin)
Samacsys Footprint Name：SOT-23 (TO-236) CASE 318-08Samacsys Released Date：2017-05-04 08:31:21
Is Samacsys：N其他特性：BUILT-IN BIAS RESISTOR RATIO 0.1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.4 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signals表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MMUN2133LT1 数据手册

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Order this document  
by MMUN2111LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon Surface Mount Transistor with  
Monolithic Bias Resistor Network  
Motorola Preferred Devices  
This new series of digital transistors is designed to replace a single device and its  
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single  
transistor with a monolithic bias network consisting of two resistors; a series base  
resistor and a base-emitter resistor. The BRT eliminates these individual components  
by integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SOT-23 package which is  
designed for low power surface mount applications.  
PNP SILICON  
BIAS RESISTOR  
TRANSISTOR  
•
•
•
•
Simplifies Circuit Design  
Reduces Board Space  
PIN 3  
COLLECTOR  
(OUTPUT)  
Reduces Component Count  
3
The SOT-23 package can be soldered using wave or  
reflow. The modified gull-winged leads absorb thermal  
stress during soldering eliminating the possibility of  
damage to the die.  
R1  
R2  
1
PIN 1  
BASE  
2
(INPUT)  
•
Available in 8 mm embossed tape and reel. Use the  
Device Number to order the 7 inch/3000 unit reel.  
Replace “T1” with “T3” in the Device Number to order  
the 13 inch/10,000 unit reel.  
CASE 318-08, STYLE 6  
SOT-23 (TO-236AB)  
PIN 2  
EMITTER  
(GROUND)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
Collector-Emitter Voltage  
Collector Current  
V
50  
Vdc  
I
C
100  
mAdc  
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
*200  
1.6  
mW  
mW/°C  
A
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
625  
Unit  
°C/W  
°C  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
θJA  
T , T  
–65 to +150  
J
stg  
Maximum Temperature for Soldering Purposes,  
Time in Solder Bath  
260  
10  
°C  
Sec  
T
L
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
MMUN2111LT1  
MMUN2112LT1  
MMUN2113LT1  
MMUN2114LT1  
MMUN2115LT1  
A6A  
A6B  
A6C  
A6D  
A6E  
10  
22  
47  
10  
10  
10  
22  
47  
47  
∞
(2)  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
(Replaces MMUN2111T1/D)  
Motorola, Inc. 1996  
1234567...10

中文翻译

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MMUN2134L ONSEMI

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MMUN2134LT1 ONSEMI

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MMUN2134LT1 MOTOROLA

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 		PNP SILICON BIAS RESISTOR TRANSISTOR

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