Datasheet > MMUN2134

MMUN2134

更新时间： 2024-02-06 12:20:26

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
7页	261K
描述
Bias Resistor Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MMUN2134 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MMUN2134 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

MMUN2111RLT1

MMUN2112RLT1

PNP Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its

external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis-

tor with a monolithic bias network consisting of two resistors; a series base resistor and a

base-emitter resistor.The BRT eliminates these individual components by integrating them

into a single device. The use of a BRT can reduce both system cost and board space. The

device is housed in the SOT-23 package which is

designed for low power surface mount applications.

Simplifies Circuit Design

MMUN2113RLT1

MMUN2114RLT1

MMUN2115RLT1

MMUN2116RLT1

MMUN2130RLT1

MMUN2131RLT1

MMUN2132RLT1

MMUN2133RLT1

MMUN2134RLT1

Reduces Board Space

Reduces Component Count

The SOT-23 package can be soldered using wave or

reflow. The modified gull-winged leads absorb thermal

stress during soldering eliminating the possibility of

damage to the die.

Available in 8 mm embossed tape and reel. Use the

Device Number to order the 7 inch/3000 unit reel.

PNP SILICON

BIAS RESISTOR

TRANSISTOR

Replace “T1” with “T3” in the Device Number to order

the 13 inch/10,000 unit reel

PIN3

Collector

PIN1

base

(output)

(Input)

PIN2

Emitter

(Ground)

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUM RATINGS (T _A= 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

V_CBO

V _CEO

I_C

Collector-Emitter Voltage

Vdc

Collector Current

Total Power Dissipation @ T _A= 25°C⁽¹⁾

100

200

1.6

mAdc

P _D

Derate above 25°C

mW/°C

THERMAL CHARACTERISTICS

Rating

Symbol

R _{θ JA}

Value

Unit

Thermal Resistance — Junction-to-Ambient (surface mounted)

Operating and Storage Temperature Range

Maximum Temperature for Soldering Purposes

Time in Solder Bath

625

°C/W

T _J, T _stg

–65 to +150

°C

260

T _L

Sec

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

A6A

R1 (K)

R2 (K)

MMUN2111LT1

MMUN2112LT1

MMUN2113LT1

MMUN2114LT1

MMUN2115LT1⁽²⁾

A6B

A6C

A6D

A6E

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

Q1–1/7

12 3 4 5 6 7

下载PDF

与MMUN2134相关器件

型号	品牌	描述	获取价格	数据表
MMUN2134-G	WEITRON	Transistor	获取价格
MMUN2134L	ONSEMI	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k	获取价格
MMUN2134LT1	LRC	Bias Resistor Transistors	获取价格
MMUN2134LT1	ONSEMI	PNP SILICON BIAS RESISTOR TRANSISTOR	获取价格
MMUN2134LT1	MOTOROLA	PNP SILICON BIAS RESISTOR TRANSISTOR	获取价格
MMUN2134LT1G	ONSEMI	PNP 双极数字晶体管 (BRT)	获取价格