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MMSZ51ET3

更新时间： 2024-11-07 03:40:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 167K
描述
DIODE 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425-04, 2 PIN, Voltage Regulator Diode

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MMSZ51ET3 数据手册

 浏览型号MMSZ51ET3的Datasheet PDF文件第2页浏览型号MMSZ51ET3的Datasheet PDF文件第3页浏览型号MMSZ51ET3的Datasheet PDF文件第4页浏览型号MMSZ51ET3的Datasheet PDF文件第5页浏览型号MMSZ51ET3的Datasheet PDF文件第6页浏览型号MMSZ51ET3的Datasheet PDF文件第7页 
MMSZxxxET1 Series,  
SZMMSZxxxET1G Series  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Specification Features  
1
2
Cathode  
Anode  
• 500 mW Rating on FR−4 or FR−5 Board  
• Wide Zener Reverse Voltage Range − 2.4 V to 56 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 kV) per Human Body Model  
• Peak Power − 225 W (8 X 20 ms)  
2
1
• AEC−Q101 Qualified and PPAP Capable  
• SZ Prefix for Automotive and Other Applications Requiring Unique  
SOD−123  
CASE 425  
STYLE 1  
Site and Control Change Requirements  
• Pb−Free Packages are Available  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
MARKING DIAGRAM  
xxx MG  
1
G
xxx = Device Code  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
@ T ≤ 25°C  
ORDERING INFORMATION  
L
†
Total Power Dissipation on FR−5 Board,  
P
D
Device  
Package  
Shipping  
(Note 2) @ T = 75°C  
500  
6.7  
mW  
L
MMSZxxxET1  
SOD−123  
(Pb−Free)  
3000 / Tape &  
Reel  
Derated above 75°C  
mW/°C  
Thermal Resistance, Junction−to−Ambient  
(Note 3)  
R
340  
°C/W  
°C/W  
°C  
q
JA  
SZMMSZxxxET1G SOD−123  
(Pb−Free)  
3000 / Tape &  
Reel  
Thermal Resistance, Junction−to−Lead  
(Note 3)  
R
q
JL  
150  
MMSZxxxET3  
SOD−123  
(Pb−Free)  
10,000 / Tape &  
Reel  
Junction and Storage Temperature Range T , T  
−55 to +150  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse per Figure 11  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint  
3. Thermal Resistance measurement obtained via infrared Scan Method  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 − Rev. 6  
MMSZ2V4ET1/D  
 
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