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MMSD914 PDF预览

MMSD914

更新时间: 2024-11-24 22:30:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管光电二极管
页数 文件大小 规格书
3页 25K
描述
High Conductance Fast Diode

MMSD914 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOD-123
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:3.22
Is Samacsys:N其他特性:FAST SWITCHES
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:1 A
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMSD914 数据手册

 浏览型号MMSD914的Datasheet PDF文件第2页浏览型号MMSD914的Datasheet PDF文件第3页 
MMSD914  
General Description:  
Features:  
The high breakdown voltage, fast switching speed and high  
forward conductance of this diode packaged in a SOD-123  
Surface Mount package makes it desirable also as a general  
purpose diode.  
Compact surface mount with same footprint as mini-melf.  
400 milliwatt Power Dissipation package.  
High Breakdown Voltage, Fast Switching Speed.  
Typical capacitance less than 1.5 picofarad.  
Ordering:  
7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.  
High Conductance  
Fast Diode  
Absolute Maximum Ratings* TA = 25OC unless otherwise noted  
Sym  
Parameter  
Value  
Units  
Tstg  
TJ  
Storage Temperature  
-55 to +150  
OC  
OC  
Operating Junction Temperature  
-55 to +150  
400  
PD  
Total Power Dissipation at TA = 25OC  
Linear Derating Factor from TA = 25OC  
Thermal Resistance Junction-to-Ambient  
Working Inverse Voltage  
W
3.2  
mW/OC  
OC/W  
V
ROJA  
Wiv  
IO  
312  
75  
Average Rectified Current  
200  
mA  
IF  
DC Forward Current (IF)  
600  
mA  
iF(surge)  
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 Second  
Pulse Width = 1.0 microsecond  
1.0  
Amp  
Amp  
2.0  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired  
ELECTRICALLY THE SAME AS  
THE FDLL914 DEVICE. SOURCED  
FROM THE 1P PRODUCT.  
Top Mark: 5D  
Actual Size  
Electrical Characteristics  
TA = 25OC unless otherwise noted  
SYM  
CHARACTERISTICS  
MIN  
MAX  
UNITS  
TEST CONDITIONS  
BV  
Breakdown Voltage  
100  
75  
V
V
IR = 100 uA  
IR  
=
5.0 uA  
IR  
Reverse Leakage  
25  
50  
5.0  
nA  
uA  
uA  
VR  
VR  
=
=
20 V  
20 V TA = 150OC  
VR = 75 V  
VF  
CT  
Forward Voltage  
Capacitance  
1.0  
4.0  
4.0  
V
IF  
=
=
10 mA  
pF  
ns  
VR  
0.0 V,f = 1.0 MHz  
TRR Reverse Recovery Time  
IF = 10 mA VR = 6.0 V  
IRR 1.0 mA  
RL = 100 Ohms  
=
MMSD914 - Rev. A  
© 1999 Fairchild Semiconductor Corporation  

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