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MMSD914T1G PDF预览

MMSD914T1G

更新时间: 2024-11-21 12:22:51
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关光电二极管PC
页数 文件大小 规格书
4页 127K
描述
Switching Diode

MMSD914T1G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:1 week
风险等级:0.87Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:225805
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Small Outline DiodeSamacsys Footprint Name:SOD-123 CASE425-04 ISSUE G
Samacsys Released Date:2015-10-05 09:04:43Is Samacsys:N
其他特性:FAST SWITCHING配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.425 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MMSD914T1G 数据手册

 浏览型号MMSD914T1G的Datasheet PDF文件第2页浏览型号MMSD914T1G的Datasheet PDF文件第3页浏览型号MMSD914T1G的Datasheet PDF文件第4页 
MMSD914T1G,  
SMMSD914T1G,  
MMSD914T3G  
Switching Diode  
Features  
http://onsemi.com  
SOD123 Surface Mount Package  
High Breakdown Voltage  
Fast Speed Switching Time  
AECQ101 Qualified and PPAP Capable  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant*  
SOD123  
CASE 425  
PLASTIC  
1
2
CATHODE  
ANODE  
MAXIMUM RATINGS  
Rating  
Continuous Reverse Voltage  
Peak Forward Current  
Symbol  
Value  
100  
Unit  
Vdc  
MARKING DIAGRAM  
V
R
I
F
200  
mAdc  
mAdc  
5D M G  
1
2
Peak Forward Surge Current  
I
500  
FM(surge)  
G
Nonrepetitive Peak  
I
FSM  
Forward Surge Current  
Pulse Width =1 second  
Pulse Width =1 micro second  
5D  
M
G
= Specific Device Code  
= Date Code  
= PbFree Package  
1.0  
2.0  
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
THERMAL CHARACTERISTICS  
ORDERING INFORMATION  
Characteristic  
Symbol  
Max  
Unit  
Device  
Package  
Shipping  
Total Device Dissipation FR5 Board  
(Note 1)  
P
D
425  
mW  
MMSD914T1G  
SOD123 3,000 / Tape & Reel  
(PbFree)  
T = 25C  
Derate above 25C  
A
SMMSD914T1G SOD123 3,000 / Tape & Reel  
(PbFree)  
3.4  
mW/C  
C/W  
Thermal Resistance,  
JunctiontoAmbient  
R
q
JA  
MMSD914T3G  
SOD123 10,000 / Tape & Reel  
(PbFree)  
290  
Junction and Storage Temperature Range  
T , T  
55 to  
+150  
C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
z
1. FR5 = 1.0oz Cu, 1.0in pad  
*For additional information on our PbFree strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 10  
MMSD914T1/D  
 

MMSD914T1G 替代型号

型号 品牌 替代类型 描述 数据表
MMSD914T3 ONSEMI

完全替代

Switching Diode, High Speed, 100 V
MMSD914T1 ONSEMI

完全替代

Low-Cost 100 mA High-Voltage Buck and Buck-Boost Using NCP1052
MMSD914T3G ONSEMI

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Switching Diode

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