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MMSD485B_11 PDF预览

MMSD485B_11

更新时间: 2024-11-21 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 信号二极管
页数 文件大小 规格书
2页 103K
描述
Small Signal Diode

MMSD485B_11 数据手册

 浏览型号MMSD485B_11的Datasheet PDF文件第2页 
August 2011  
MMSD485B  
Small Signal Diode  
SOD123  
Color Band Denotes Cathode  
Top Marking: 28  
Absolute Maximum Ratings* TA = 25°C unless otherwise noted  
Symbol  
VRRM  
IF(AV)  
Parameter  
Value  
100  
Units  
V
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
200  
mA  
IFSM  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
TSTG  
TJ  
Storage Temperature Range  
-55 to +150  
150  
°C  
°C  
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle  
operations.  
Thermal Characteristics  
Symbol  
PD  
Parameter  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Value  
400  
Units  
mW  
RθJA  
312  
°C/W  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Breakdown Voltage  
Forward Voltage  
Reverse Leakage  
Test Conditions  
IR = 100μA  
Min.  
Max.  
Units  
VR  
VF  
IR  
200  
V
V
IF = 100mA  
1.0  
VR = 180V  
25  
nA  
VR = 180V, TA = 150°C  
5.0  
μA  
CT  
Total Capacitance  
VR = 0, f = 1.0MHz  
6.0  
pF  
© 2011 Fairchild Semiconductor Corporation  
MMSD485B Rev. A0  
www.fairchildsemi.com  
1

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