August 2011
MMSD485B
Small Signal Diode
SOD123
Color Band Denotes Cathode
Top Marking: 28
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
VRRM
IF(AV)
Parameter
Value
100
Units
V
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
4.0
A
A
Pulse Width = 1.0 microsecond
TSTG
TJ
Storage Temperature Range
-55 to +150
150
°C
°C
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
PD
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
400
Units
mW
RθJA
312
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Breakdown Voltage
Forward Voltage
Reverse Leakage
Test Conditions
IR = 100μA
Min.
Max.
Units
VR
VF
IR
200
V
V
IF = 100mA
1.0
VR = 180V
25
nA
VR = 180V, TA = 150°C
5.0
μA
CT
Total Capacitance
VR = 0, f = 1.0MHz
6.0
pF
© 2011 Fairchild Semiconductor Corporation
MMSD485B Rev. A0
www.fairchildsemi.com
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