MMS9013-L

更新时间： 2024-01-08 16:46:11

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
2页	201K
描述
NPN Silicon Plastic-Encapsulate Transistor

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技术参数
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MMS9013-L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Base Number Matches：	1

MMS9013-L 数据手册

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMS9013-L

MMS9013-H

Micro Commercial Components

Features

•

SOT-23 Plastic-Encapsulate Transistors

NPN Silicon

Plastic-Encapsulate

Transistor

Capable of 0.3Watts(Tamb=25^OC) of Power Dissipation.

Collector-current 0.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking : J3

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

SOT-23

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Collector-Base Breakdown Voltage

5.0

---

Vdc

(I =100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =0.1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

Collector Cutoff Current

0.1

uAdc

CBO

(V_CB=40Vdc, I =0)

Collector Cutoff Current

CEO

(V_CE=20Vdc, I =0)

DIMENSIONS

I_EBO

Emitter Cutoff Current

INCHES

MIN

(V_EB=5.0Vdc, I =0)

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

ON CHARACTERISTICS

h_FE(1)

DC Current Gain

120

---

350

---

(I =50mAdc, V_CE=1.0Vdc)

h_FE(2)

DCCurrent Gain

(I =500mAdc, V_CE=1.0Vdc)

V_CE(sat)

V_BE(sat)

V_EB

Collector-Emitter Saturation Voltage

0.6

1.2

1.4

Vdc

.085

.37

(I =500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

---

Suggested Solder

Pad Layout

(I =500mAdc, I_B=50mAdc)

Base- Emitter Voltage

(I_E=100mAdc)

---

.031

.800

SMALL-SIGNAL CHARACTERISTICS

f_T

.035

.900

Transistor Frequency

(I =20mAdc, V_CE=6.0Vdc, f=30MHz)

150

---

MHz

.079

inches

2.000

CLASSIFICATION OF HFE (1)

Rank

Range

120-200

200-350

.037

.950

.037

.950

www.mccsemi.com

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Revision: A

2011/01/01

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