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MMS9014-L_13 PDF预览

MMS9014-L_13

更新时间: 2022-02-26 13:15:46
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 340K
描述
NPN Silicon Plastic-Encapsulate Transistor

MMS9014-L_13 数据手册

 浏览型号MMS9014-L_13的Datasheet PDF文件第2页 
M C C  
Micro Commercial Components  
MMS9014-L  
MMS9014-H  
TM  
Micro Commercial Components  
20736 Marilla Street Chatsworth  
CA 91311  
Phone:(818) 701-4933  
Fax: (818) 701-4939  
Features  
·
·
Halogen free available upon request by adding suffix "-HF"  
SOT-23Plastic-Encapsulate Transistors  
Capable of 0.2Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.1A  
Collector-base Voltage 50V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking : J6  
NPN Silicon  
Plastic-Encapsulate  
Transistor  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
SOT-23  
·
·
A
D
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Max  
C
Symbol  
Parameter  
Min  
Units  
B
C
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Collector-Base Breakdown Voltage  
50  
45  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
E
B
(I =100μAdc, IE=0)  
C
E
F
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100μAdc, IC=0)  
E
H
G
J
I
Collector Cutoff Current  
0.1  
0.1  
0.1  
μAdc  
μAdc  
μAdc  
CBO  
(VCB=50Vdc, I =0)  
E
K
I
Collector Cutoff Current  
CEO  
(VCE=35Vdc, I =0)  
B
DIMENSIONS  
IEBO  
Emitter Cutoff Current  
INCHES  
MM  
(VEB=3.0Vdc, I =0)  
C
DIM  
A
MIN  
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
MAX  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
ON CHARACTERISTICS  
hFE(1)  
B
DC Current Gain  
200  
---  
1000  
0.3  
---  
C
D
E
(I =1.0mAdc, VCE=5.0Vdc)  
C
1.78  
.45  
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
Vdc  
Vdc  
F
G
H
J
.013  
.89  
.100  
1.12  
.180  
.51  
(I =100mAdc, IB=5.0mAdc)  
C
Base-Emitter Saturation Voltage  
---  
1.0  
.085  
.37  
(I =100mAdc, IB=5.0mAdc)  
C
K
SMALL-SIGNAL CHARACTERISTICS  
Suggested Solder  
Pad Layout  
fT  
Transistor Frequency  
(I =10mAdc, VCE=5.0Vdc, f=30MHz)  
150  
---  
MHz  
C
.031  
.800  
CLASSIFICATION OF hFE  
.035  
.900  
L
Rank  
H
Range  
200~450  
450~1000  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 2  
Revision: B  
2013/01/01  

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