MMPQ3725

更新时间： 2024-01-13 16:35:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管开关光电二极管
页数	文件大小	规格书
4页	115K
描述
Quad Core Drier Transistor

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中文翻译

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技术参数
数据手册

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MMPQ3725 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	1.2 A
最小直流电流增益 (hFE)：	60	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	NPN
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

MMPQ3725 数据手册

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by MMPQ3725/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

Motorola Preferred Device

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

°C

CASE 751B–05, STYLE 4

SO–16

Collector–Emitter Voltage

Emitter–Base Voltage

CEO

CES

5.0

Collector Current — Continuous

1.0

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

Four

Transistors

Transistor Equal Power

Each

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.6

4.8

1.4

11.2

Watts

mW/°C

Power Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

2.5

2.0

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

(I = 10 mAdc, I = 0)

5.0

—

Vdc

Adc

(BR)CEO

Collector–Base Breakdown Voltage

(I = 100 Adc, V = 0)

(BR)CES

(BR)EBO

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

—

Collector Cutoff Current

(V = 40 Vdc, I = 0)

0.5

CBO

1. Pulse Test: Pulse Width

300 s; Duty Cycle

2.0%.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

中文翻译

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