Datasheet > MMPQ3467R2

MMPQ3467R2

更新时间： 2024-01-25 01:08:33

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
4页	143K
描述
1A, 40V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, CASE 751B-05, SOP-16

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技术参数
数据手册

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MMPQ3467R2 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G16
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	配置：	SEPARATE, 4 ELEMENTS
JESD-30 代码：	R-PDSO-G16	元件数量：	4
端子数量：	16	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管元件材料：	SILICON	Base Number Matches：	1

MMPQ3467R2 数据手册

MMPQ3467

Quad Memory Driver

Transistor

PNP Silicon

MAXIMUM RATINGS

http://onsemi.com

Rating

Symbol

Value

−40

Unit

Vdc

Adc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

−40

−5.0

−1.0

Collector Current —

Continuous

Four

Transistors

Equal

CASE 751B−05, STYLE 4

SO−16

Each

Transistor

Power

Power Dissipation

@ T = 25°C

0.52

4.2

1.2

9.6

Derate above 25°C

mW/°C

Power Dissipation

@ T = 25°C

1.0

8.0

2.5

Derate above 25°C

mW/°C

°C

Operating and Storage

Junction Temperature

Range

T , T

−55 to +150

stg

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

(1)

Collector−Emitter Breakdown Voltage

−40

−5.0

—

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = −10 mAdc, I = 0)

Collector−Base Breakdown Voltage

(I = −10 mAdc, I = 0)

Emitter−Base Breakdown Voltage

(I = −10 mAdc, I = 0)

—

Vdc

Collector Cutoff Current

(V = −30 Vdc, I = 0)

−200

nAdc

CBO

Emitter Cutoff Current

(V = −3.0 Vdc, I = 0)

—

EBO

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Publication Order Number:

August, 2006 − Rev. 4

MMPQ3467/D

12 3 4

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