5秒后页面跳转
MMDP-65697L-40/883 PDF预览

MMDP-65697L-40/883

更新时间: 2024-11-12 20:26:07
品牌 Logo 应用领域
TEMIC 静态存储器内存集成电路
页数 文件大小 规格书
9页 104K
描述
Standard SRAM, 256KX1, 40ns, CMOS, CQFP28,

MMDP-65697L-40/883 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
Is Samacsys:N最长访问时间:40 ns
I/O 类型:SEPARATEJESD-30 代码:S-CQFP-F28
JESD-609代码:e0内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:1
功能数量:1端口数量:1
端子数量:28字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX1输出特性:3-STATE
可输出:NO封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DFP封装等效代码:FL28,.4
封装形状:SQUARE封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B最大待机电流:0.0003 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMDP-65697L-40/883 数据手册

 浏览型号MMDP-65697L-40/883的Datasheet PDF文件第2页浏览型号MMDP-65697L-40/883的Datasheet PDF文件第3页浏览型号MMDP-65697L-40/883的Datasheet PDF文件第4页浏览型号MMDP-65697L-40/883的Datasheet PDF文件第5页浏览型号MMDP-65697L-40/883的Datasheet PDF文件第6页浏览型号MMDP-65697L-40/883的Datasheet PDF文件第7页 
MATRA MHS  
M 65697  
256 K × 1 Ultimate CMOS SRAM  
Introduction  
The M 65697 is a very low power CMOS static RAM supply current (Typical value = 0.1 µA) with a fast access  
organized as 262144 × 1 bit. It is manufactured using the time at 40 ns. The high stability of the 6T cell provides  
MHS high performance CMOS technology named excellent protection against soft errors due to noise.  
SCMOS.  
Extra protection against heavy ions is given by the use of  
With this process, MHS is the first to bring the solution for  
applications where fast computing is as mandatory as low  
consumption, such as aerospace electronics, portable  
instruments or embarked systems.  
an epitaxial layer of a P substrate.  
The M 67697 is 100 % processed following the test  
methods of MIL STD 883 and/or ESA/SCC 9000, making  
it ideally suitable for military/space applications that  
demand superior levels of performance and reliability.  
Utilizing an array of six transistors (6T) memory cells, the  
M
65697 combines an extremely low standby  
Features  
D Access time  
D 300 mils width package  
D TTL compatible inputs and outputs  
D Asynchronous  
commercial : 35(*), 40, 45, 55 ns  
industrial and military : 40(*), 45, 55 ns  
D Very low power consumption  
active : 50 mW (typ)  
D Single 5 volt supply  
D Equal cycle and access time  
standby : 0.5 µW (typ)  
D Gated inputs :  
no pull-up/down  
resistors are required  
data retention : 0.4 µW (typ)  
D Wide temperature range : –55 to + 125 °C  
* Preliminary. Consult sales.  
Interface  
Block Diagram  
Rev. C (12/12/94)  
1

与MMDP-65697L-40/883相关器件

型号 品牌 获取价格 描述 数据表
MMDP-65697L-40/883:D TEMIC

获取价格

Standard SRAM, 256KX1, 40ns, CMOS, CQFP28,
MMDP-65697L-40P883 TEMIC

获取价格

Standard SRAM, 256KX1, 40ns, CMOS, CQFP28,
MMDP-65697L-40SHXXX TEMIC

获取价格

Standard SRAM, 256KX1, 40ns, CMOS, CQFP28,
MMDP-65697L-40SHXXX:D TEMIC

获取价格

Standard SRAM, 256KX1, 40ns, CMOS, CQFP28,
MMDP-65697L-45 TEMIC

获取价格

Standard SRAM, 256KX1, 45ns, CMOS, CQFP28,
MMDP-65697L-45/883 TEMIC

获取价格

Standard SRAM, 256KX1, 45ns, CMOS, CQFP28,
MMDP-65697L-45/883:D TEMIC

获取价格

Standard SRAM, 256KX1, 45ns, CMOS, CQFP28,
MMDP-65697L-45:D TEMIC

获取价格

Standard SRAM, 256KX1, 45ns, CMOS, CQFP28,
MMDP-65697L-45P883 TEMIC

获取价格

Standard SRAM, 256KX1, 45ns, CMOS, CQFP28,
MMDP-65697L-45P883:D TEMIC

获取价格

Standard SRAM, 256KX1, 45ns, CMOS, CQFP28,