Datasheet > MMBD770W_09

MMBD770W_09

更新时间： 2024-02-23 22:27:40

品牌	Logo	应用领域
强茂 - PANJIT		肖特基二极管
页数	文件大小	规格书
3页	187K
描述
SURFACE MOUNT SCHOTTKY DIODES

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数据手册

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MMBD770W_09 数据手册

DATA SHEET

MMBD770W

Unit: inch (mm)

SOT-323

SURFACE MOUNT SCHOTTKY DIODES

POWER

200mA

70 Volts

VOLTAGE

.087(2.2)

.070(1.8)

FEATURES

.054(1.35)

.045(1.15)

• Extremely low minority carrier lifetime

Low capacitance ( 0.4pF @ 20V typical )

• Low reverse leakage ( 30nA @ 35V typical )

•

.006(.15)

.002(.05)

.056(1.40)

.047(1.20)

• Surface mount package ideally suited for automatic insertion

In compliance with EU RoHS 2002/95/EC directives

.004(.10)MAX.

MECHANICALDATA

.016(.40)

.008(.20)

Case: SOT-323, Plastic

Terminals: Solderable per MIL-STD-202G, Method 208

Approx. Weight: 0.0048 gram

Marking : 770

MAXIMUM RATINGS

Ratings at 25^OC ambient temperature unless otherwise specified.

PARAMETER

Maximum Reverse Voltage

SYMBOL

VALUE

UNIT

V_R

Peak Reverse Voltage

V_RRM

I_F

Continuous Forward Current

Power Dissipation ⁽¹⁾

0.25

180

P_TOT

R_QJA

T_J

Thermal Resistance , Junction to Ambient ⁽¹⁾

Junction Temperature

556

^OC/W

^OC

-50 to 125

-50 to 150

Storage Temperature

T_STG

^OC

Notes : 1. FR-5 Board = 1.0 × 0.75 × 0.062 in.

ELECTRICAL CHARACTERISTICS (T_A=25^OC, unless otherwise noted)

PARAMETER

Reverse Breakdown Voltage

SYMBOL

V_(BR)

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_R=10uA

Reverse Current

Forward Voltage

Total Capacitance

I_R

V_F=35V

I_F=1mA

0.2

0.5

1.0

V_F

C_T

I_F=10mA

V_R=20V, f =1MHz

1.0

PAGE . 1

REV.0.1-FEB.23.2009

12 3

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