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MMBD770T1 PDF预览

MMBD770T1

更新时间: 2024-01-27 12:06:08
品牌 Logo 应用领域
安森美 - ONSEMI 微波混频二极管光电二极管
页数 文件大小 规格书
8页 156K
描述
Schottky Barrier Diodes

MMBD770T1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SC-70
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknown风险等级:5.67
Is Samacsys:N其他特性:LOW REVERSE LEAKAGE
配置:SINGLE最大二极管电容:1 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.12 W认证状态:COMMERCIAL
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MMBD770T1 数据手册

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Order this document  
BY MMBD110T1/D  
SEMICONDUCTOR TECHNICAL DATA  
Schottky barrier diodes are designed primarily for high–efficiency UHF and  
VHF detector applications. Readily available to many other fast switching RF  
and digital applications. They are housed in the SOT–323/SC–70 package  
which is designed for low–power surface mount applications.  
3
Extremely Low Minority Carrier Lifetime  
Very Low Capacitance  
1
2
CASE 419A–02, STYLE 2  
SOT-323/SC–70  
Low Reverse Leakage  
Available in 8 mm Tape and Reel  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
MMBD110T1  
MMBD330T1  
MMBD770T1  
V
R
7.0  
30  
70  
Vdc  
Forward Power Dissipation  
P
T
120  
mW  
F
T
A
= 25°C  
Junction Temperature  
55 to +125  
55 to +150  
°C  
°C  
J
Storage Temperature Range  
T
stg  
DEVICE MARKING  
MMBD110T1 = 4M  
MMBD330T1 = 4T  
MMBD770T1 = 5H  
Thermal Clad is a registered trademark of the Bergquist Company.  
Motorola, Inc. 1996

MMBD770T1 替代型号

型号 品牌 替代类型 描述 数据表
MMBD770T1G ONSEMI

完全替代

Schottky Barrier Diodes
MMBD770T1 MOTOROLA

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