MMBD4148

更新时间： 2024-09-22 22:46:07

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	90K
描述
350mW 100 Volt Silicon Epitaxial Diode

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中文翻译

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数据手册

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MMBD4148 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBD4148

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Features

Low Current Leakage

Low Cost

Small Outline Surface Mount Package

350mW 100 Volt

Silicon Epitaxial Diode

Pin Configuration

Top View

KA2

SOT-23

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 357K/W Junction To Ambient

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

Peak Reverse

Voltage

V_R

75V

V_RM

100V

DIMENSIONS

Average Rectified

Current

I_O

150mA Resistive Load

INCHES

MIN

f > 50Hz

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Power Dissipation

Junction

P_TOT

T_J

350mW

150°C

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

Temperature

Peak Forward Surge

Current

I_FSM

V_F

I_R

t=1s,Non-Repetitive

Maximum

.085

.37

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.855V

25nA

I_FM= 10mA;

T_J= 25°C*

Suggested Solder

Pad Layout

T_J= 25°C

V_R= 20 V

.031

.800

.035

.900

Typical Junction

Capacitance

Reverse Recovery

Time

C_J

T_rr

2pF

4nS

Measured at

1.0MHz, V_R=0V

I_F=10mA

.079

2.000

inches

V_R= 6V

R_L=100W

.037

.950

*Pulse test: Pulse width 300 msec, Duty cycle 2%

.037

.950

www.mccsemi.com

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中文翻译

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