Datasheet > MMBD4148_11

MMBD4148_11

更新时间： 2024-09-25 10:52:47

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
4页	156K
描述
350mW 100 Volt Silicon Epitaxial Diode

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中文翻译

获取价格

数据手册

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MMBD4148_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

MMBD4148

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Features

•

Low Current Leakage

Low Cost

Lead Free Finish/Rohs Compliant ("P"Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

350mW 100 Volt

Silicon Epitaxial Diode

Moisture Sensitivity Level 1

Pin Configuration

Top View

SOT-23

Marking : KA2, A2

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

•

Maximum Thermal Resistance; 357K/W Junction To Ambient

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

Peak Reverse

Voltage

V_R

75V

V_RM

100V

DIMENSIONS

Average Rectified

Current

Power Dissipation

Junction

Temperature

Peak Forward Surge

Current

I_O

150mA Resistive Load

f > 50Hz

350mW

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

P_TOT

T_J

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

150°C

I_FSM

V_F

I_R

t=1s,Non-Repetitive

Maximum

.085

.37

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.855V

25nA

I_FM= 10mA;

T_J= 25°C*

Suggested Solder

Pad Layout

T_J= 25°C

V_R= 20 V

.031

.800

.035

.900

Typical Junction

Capacitance

Reverse Recovery

Time

C_J

T_rr

2pF

4nS

Measured at

1.0MHz, V_R=0V

I_F=10mA

.079

2.000

inches

V_R= 6V

R_L=100Ω

.037

.950

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

.037

.950

www.mccsemi.com

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Revision: A

2011/01/01

12 3 4

中文翻译

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