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MMBD2838_NL PDF预览

MMBD2838_NL

更新时间: 2024-11-06 13:11:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 信号二极管光电二极管
页数 文件大小 规格书
2页 57K
描述
Rectifier Diode, 2 Element, 0.2A, 75V V(RRM), Silicon

MMBD2838_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.52配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MMBD2838_NL 数据手册

 浏览型号MMBD2838_NL的Datasheet PDF文件第2页 
MMBD2838  
Connection Diagram  
3
3
3
A6.  
2
1
2
1
2
1
SOT-23  
Small Signal Diode  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
75  
V
Average Rectified Forward Current  
200  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
2.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-55 to +150  
°C  
Tstg  
TJ  
Operating Junction Temperature  
-55 to +150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
350  
357  
mW  
RθJA  
°C/W  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min Max  
Units  
VR  
VF  
Breakdown Voltage  
V
75  
IR = 100 µA  
Forward Voltage  
IF = 50 mA  
IF = 100 mA  
1.0  
1.2  
V
V
IR  
Reverse Current  
nA  
VR = 50 V  
100  
4.0  
CT  
trr  
Total Capacitance  
Reverse Recovery Time  
pF  
ns  
VR = 0, f = 1.0 MHz  
IF = IR = 10 mA, IRR = 1.0 mA,  
4.0  
RL = 100 Ω  
MMBD2838, Rev.  
A
2002 Fairchild Semiconductor Corporation  

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