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MMBD1205 PDF预览

MMBD1205

更新时间: 2024-01-06 03:26:52
品牌 Logo 应用领域
安森美 - ONSEMI PC光电二极管
页数 文件大小 规格书
7页 288K
描述
高导通,Ultrafast 二极管

MMBD1205 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.54配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MMBD1205 数据手册

 浏览型号MMBD1205的Datasheet PDF文件第2页浏览型号MMBD1205的Datasheet PDF文件第3页浏览型号MMBD1205的Datasheet PDF文件第4页浏览型号MMBD1205的Datasheet PDF文件第5页浏览型号MMBD1205的Datasheet PDF文件第6页浏览型号MMBD1205的Datasheet PDF文件第7页 
Small Signal Diodes  
MMBD1201 - MMBD1205  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
www.onsemi.com  
ABSOLUTE MAXIMUM RATINGS (Note 1, Note 2)  
Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Value  
Unit  
CONNECTION DIAGRAM  
V
RRM  
Maximum Repetitive Reverse  
Voltage  
100  
V
3
3
1202  
1201  
I
Average Rectified Forward Current  
200  
1.0  
mA  
A
F(AV)  
I
NonRepetitive Peak  
Forward Surge  
Current  
Pulse Width =  
FSM  
1
2
3
1.0 s  
3
1203  
1
1204  
Pulse Width =  
2.0  
1.0 ms  
T
Storage Temperature Range  
55 to + 150  
°C  
°C  
2
1
2
STG  
3
1205  
T
J
Operating Junction Temperature  
150  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
2
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steadystate limits. ON Semiconductor should be consulted  
on applications involving pulsed or lowdutycycle operations.  
THERMAL CHARACTERISTICS  
SOT23  
CASE 31808  
Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Power Dissipation  
Value  
350  
2.8  
Unit  
mW  
P
D
MARKING DIAGRAM  
Derate Above 25°C  
mW/°C  
°C/W  
R
Thermal Resistance,  
JunctiontoAmbient  
357  
2xM G  
θ
JA  
G
2x  
= Specific Device Code  
x = 4, 5, 6, 7, 8  
M
= Date Code  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBD1201,  
MMBD1202,  
MMBD1203,  
MMBD1204,  
MMBD1205  
SOT23  
(PbFree  
Halide Free)  
3000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
July, 2021 Rev. 3  
MMBD1202/D  
 

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