Datasheet > MM74HC00MTC

MM74HC00MTC

更新时间： 2024-11-25 11:11:59

品牌	Logo	应用领域
安森美 - ONSEMI		栅光电二极管逻辑集成电路触发器
页数	文件大小	规格书
7页	258K
描述
四路2输入NAND门

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MM74HC00MTC 数据手册

DATA SHEET

www.onsemi.com

Quad 2-Input NAND Gate

MM74HC00

SOIC−14 NB,

CASE 751A−0.3

TSSOP−14,

CASE 948G−01

General Description

The MM74HC00 NAND gates utilize advanced silicon−gate

CMOS technology to achieve operating speeds similar to LS−TTL

gates with the low power consumption of standard CMOS integrated

circuits. All gates have buffered outputs. All devices have high noise

immunity and the ability to drive 10 LS−TTL loads. The 74HC logic

family is functionally as well as pin−out compatible with the standard

74LS logic family. All inputs are protected from damage due to static

MARKING DIAGRAM

HC00A

00A

AWLYWW

ALYW

discharge by internal diode clamps to V and ground.

Features

• Typical Propagation Delay: 8 ns

• Wide Power Supply Range: 2 V–6 V

• Low Quiescent Current: 20 mA Maximum (74HC Series)

• Low Input Current: 1 mA Maximum

• Fanout of 10 LS−TTL Loads

HC00A

WL, L

WW, YW = Work Week

= Specific Device Code

= Assembly Location

= Wafer Lot Number

= Year

= Pb−Free Package

• This Device is Pb−Free and Halide Free

(Note: Microdot may be in either location)

ABSOLUTE MAXIMUM RATINGS (Note 1)

CONNECTION DIAGRAM

Symbol

Parameter

Supply Voltage

Rating

Unit

Pin Assignment for SOIC and TSSOP

−0.5 to +7.0

DC Input Voltage

−0.5 to V +0.5

OUT

DC Output Voltage

−0.5 to V +0.5

I , I

Clamp Diode Current

DC Output Current, per pin

IK OK

OUT

DC V or GND Current,

per pin

Storage Temperature Range

Power Dissipation (Note 2)

S.O. Package only

−65 to +150

600

°C

STG

LOGIC DIAGRAM

500

Lead Temperature

(Soldering 10 seconds)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Unless otherwise specified all voltages are referenced to ground.

2. Power Dissipation temperature derating − plastic “N” package: –12 mW/°C

from 65°C to 85°C.

ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of

this data sheet.

Publication Order Number:

October, 2022 − Rev. 2

MM74HC00/D

12 3 4 5 6 7

中文翻译

下载PDF

MM74HC00MTC 替代型号

型号	品牌	替代类型	描述	数据表
MM74HC00MTCX	ONSEMI	完全替代	四路2输入NAND门
SN74HC00PW	TI	类似代替	QUADRUPLE 2-INPUT POSITIVE-NAND GATES

与MM74HC00MTC相关器件

型号	品牌	获取价格	描述	数据表
MM74HC00MTCX	ONSEMI	获取价格	四路2输入NAND门
MM74HC00MTCX_NL	FAIRCHILD	获取价格	Quad 2-Input NAND Gate
MM74HC00MX	ONSEMI	获取价格	四路2输入NAND门
MM74HC00MX	ROCHESTER	获取价格	NAND Gate, HC/UH Series, 4-Func, 2-Input, CMOS, PDSO14, 0.150 INCH, MS-012, SOIC-14
MM74HC00MX_NL	FAIRCHILD	获取价格	Quad 2-Input NAND Gate
MM74HC00N	FAIRCHILD	获取价格	Quad 2-Input NAND Gate
MM74HC00N	ROCHESTER	获取价格	NAND Gate, HC/UH Series, 4-Func, 2-Input, CMOS, PDIP14, 0.300 INCH, PLASTIC, MS-001, DIP-1
MM74HC00N/A+	ETC	获取价格	Quad 2-input NAND Gate
MM74HC00N/B+	ETC	获取价格	Quad 2-input NAND Gate
MM74HC00N_NL	FAIRCHILD	获取价格	Quad 2-Input NAND Gate

与MM74HC00MTC相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

MM74HC00MTC

MM74HC00MTC 数据手册

MM74HC00MTC 替代型号

与MM74HC00MTC相关器件

与MM74HC00MTC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MM74HC00MTC

MM74HC00MTC 数据手册

MM74HC00MTC 替代型号

与MM74HC00MTC相关器件

与MM74HC00MTC相关文章

您还可以找

您在本页遇到什么问题？