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MM74HC00M PDF预览

MM74HC00M

更新时间: 2024-11-21 11:11:59
品牌 Logo 应用领域
安森美 - ONSEMI PC光电二极管逻辑集成电路触发器
页数 文件大小 规格书
7页 258K
描述
四路2输入NAND门

MM74HC00M 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SOIC-14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:51 weeks
风险等级:0.46Samacsys Confidence:
Samacsys Status:ReleasedSamacsys PartID:234617
Samacsys Pin Count:14Samacsys Part Category:Undefined or Miscellaneous
Samacsys Package Category:OtherSamacsys Footprint Name:SOIC127P600X175-14N
Samacsys Released Date:2017-01-11 16:35:06Is Samacsys:N
系列:HC/UHJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:8.6235 mm
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.004 A湿度敏感等级:1
功能数量:4输入次数:2
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:RAIL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/6 VProp。Delay @ Nom-Sup:23 ns
传播延迟(tpd):113 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.753 mm
子类别:Gates最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):4.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

MM74HC00M 数据手册

 浏览型号MM74HC00M的Datasheet PDF文件第2页浏览型号MM74HC00M的Datasheet PDF文件第3页浏览型号MM74HC00M的Datasheet PDF文件第4页浏览型号MM74HC00M的Datasheet PDF文件第5页浏览型号MM74HC00M的Datasheet PDF文件第6页浏览型号MM74HC00M的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
Quad 2-Input NAND Gate  
MM74HC00  
14  
14  
1
1
SOIC14 NB,  
CASE 751A0.3  
TSSOP14,  
CASE 948G01  
General Description  
The MM74HC00 NAND gates utilize advanced silicongate  
CMOS technology to achieve operating speeds similar to LSTTL  
gates with the low power consumption of standard CMOS integrated  
circuits. All gates have buffered outputs. All devices have high noise  
immunity and the ability to drive 10 LSTTL loads. The 74HC logic  
family is functionally as well as pinout compatible with the standard  
74LS logic family. All inputs are protected from damage due to static  
MARKING DIAGRAM  
14  
14  
HC  
HC00A  
00A  
AWLYWW  
ALYW  
G
G
discharge by internal diode clamps to V and ground.  
CC  
1
1
Features  
Typical Propagation Delay: 8 ns  
Wide Power Supply Range: 2 V–6 V  
Low Quiescent Current: 20 mA Maximum (74HC Series)  
Low Input Current: 1 mA Maximum  
Fanout of 10 LSTTL Loads  
HC00A  
A
WL, L  
Y
WW, YW = Work Week  
G
= Specific Device Code  
= Assembly Location  
= Wafer Lot Number  
= Year  
= PbFree Package  
This Device is PbFree and Halide Free  
(Note: Microdot may be in either location)  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
CONNECTION DIAGRAM  
Symbol  
Parameter  
Supply Voltage  
Rating  
Unit  
V
Pin Assignment for SOIC and TSSOP  
V
CC  
0.5 to +7.0  
V
IN  
DC Input Voltage  
0.5 to V +0.5  
V
CC  
V
OUT  
DC Output Voltage  
0.5 to V +0.5  
V
CC  
I , I  
Clamp Diode Current  
DC Output Current, per pin  
20  
25  
50  
mA  
mA  
mA  
IK OK  
I
OUT  
I
DC V or GND Current,  
CC  
CC  
per pin  
T
Storage Temperature Range  
Power Dissipation (Note 2)  
S.O. Package only  
65 to +150  
600  
°C  
STG  
P
mW  
D
LOGIC DIAGRAM  
500  
T
L
Lead Temperature  
(Soldering 10 seconds)  
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Unless otherwise specified all voltages are referenced to ground.  
2. Power Dissipation temperature derating plastic “N” package: –12 mW/°C  
from 65°C to 85°C.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 1983  
1
Publication Order Number:  
October, 2022 Rev. 2  
MM74HC00/D  
 

MM74HC00M 替代型号

型号 品牌 替代类型 描述 数据表
MM74HC132M ONSEMI

完全替代

四路 2 输入 NAND 施密特触发器
74HC132DR2G ONSEMI

类似代替

Quad 2−Input NAND Gate with Schmitt−Trigger Inputs High−Performance Sili
TC74HC00AFN TOSHIBA

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QUAD 2 INPUT NAND GATE

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