Datasheet > MM018-06L

MM018-06L

更新时间： 2024-11-10 22:06:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管双极性晶体管栅
页数	文件大小	规格书
3页	120K
描述
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

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MM018-06L 数据手册

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

MM118-XX

SERIES

Features

Available in Low Conduction Loss Class as MM118-xxL or Fast

Switching Class as MM118-xxF

Compact and rugged construction offering weight and space savings

Available with PC board solderable pins (see mechanical outline below)

or threaded terminals (add “T” suffix to part number, see option below)

HPM (Hermetic Power Module)

Isolation voltage capability (in reference to the base) in excess of 3kV

Very low thermal resistance

Thermally matched construction provides excellent temperature and

power cycling capability

600 / 1200 Volts

150 Amps

3 PHASE N-CHANNEL

INSULATED GATE

BIPOLAR

TRANSISTOR (IGBT)

BRIDGE

Additional voltage ratings or terminations available upon request

Maximum Ratings per switch @ 25°C (unless otherwise specified)

PART NUMBER

SYMBOL

MM118-06

MM118-12

Collector-to-Emitter Breakdown Voltage (Gate shorted to

BV_CES

600 V

1200 V

Emitter), @ T_j³ 25°C

BV_CGR

600 V

1200 V

Collector-to-Gate Breakdown Voltage @ T_j³ 25°C, R_GS= 1

Gate-to-Emitter Voltage

continuous

transient

V_GES

V_GEM

I_C25

+/- 20 V

+/- 30 V

60 A

+/- 20 V

+/- 30 V

52 A

Continuous Collector Current

T_j=

I_C90

32 A

33 A

25°C

T_j= 90°C

Peak Collector Current, pulsewidth limited by T_{j max}

Power Dissipation

I_CM

P_D

120 A

165 W

104 A

165 W

Thermal resistance, junction to base

per switch

RQ_jc, max

0.75°C/W

Mechanical Outline

Datasheet# MSC0321A

12 3

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