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MM002-06 PDF预览

MM002-06

更新时间: 2024-11-10 22:06:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管局域网
页数 文件大小 规格书
2页 101K
描述
3 PHASE DIODE BRIDGE

MM002-06 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:MODULE包装说明:R-XUFM-X5
针数:5Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.92
Is Samacsys:N外壳连接:ISOLATED
配置:BRIDGE, 6 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.5 V
JESD-30 代码:R-XUFM-X5JESD-609代码:e0
最大非重复峰值正向电流:350 A元件数量:6
相数:3端子数量:5
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:50 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:TIN LEAD
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MM002-06 数据手册

 浏览型号MM002-06的Datasheet PDF文件第2页 
2830 S. Fairview St.  
Santa Ana, CA 92704  
PH: (714) 979-8220  
FAX: (714) 966-5256  
MM002-XX  
SERIES  
Features  
·
Available in standard switching (low VF) as MM002-xx or ultrafast  
switching as MM002-xxU  
600- 800 -1000 Volts  
150 Amps  
·
·
Compact and rugged construction offering weight and space savings  
Available with PC board solderable pins (see mechanical outline below)  
or threaded terminals (add “T” suffix to part number, see option below)  
HPM (Hermetic Power Module)  
Isolation voltage capability (in reference to the base) in excess of 3kV  
Very low thermal resistance  
Thermally matched construction provides excellent temperature and  
power cycling capability  
Additional voltage ratings or terminations available upon request  
80 nsec to 5 msec  
·
·
·
·
3 PHASE DIODE  
BRIDGE  
·
Maximum Ratings per leg @ 25°C (unless otherwise specified)  
PART NUMBER  
MM002-06  
MM002-08  
MM002-10  
Peak Repetitive Reverse Voltage, VRRM  
Peak Working Reverse Voltage, VRWM  
DC Reverse Blocking Voltage, VR  
Average Forward Current, IO  
600 V  
800 V  
1000 V  
50 A  
350 A  
50 A  
350 A  
50 A  
350 A  
Non-Repetitive Peak Surge Current, IFSM  
MM002-XX  
MM002-XXU  
200 A  
175 A  
175 A  
Operating and Storage Junction Temperature Range  
Thermal resistance, junction to base per diode  
per module  
-55°C to  
+175°C  
1.5°C/W max  
1°C/W typ.  
-55°C to  
+175°C  
1.5°C/W max 1.5°C/W max  
1°C/W typ. 1°C/W typ.  
-55°C to  
+175°C  
0.3°C/W max. 0.3°C/W max. 0.3°C/W max  
Mechanical Outline  
Datasheet# MSC0325A  

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