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MLCE9.0ATR PDF预览

MLCE9.0ATR

更新时间： 2024-11-05 18:43:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 268K
描述
Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN

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中文翻译

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MLCE9.0ATR 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：O-PALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.85
其他特性：HIGH RELIABILITY最大击穿电压：11.1 V
最小击穿电压：10 V击穿电压标称值：10.55 V
外壳连接：ISOLATED最大钳位电压：15.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e0最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：9 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIALBase Number Matches：1

MLCE9.0ATR 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
1500 Watt Low Capacitance  
Transient Voltage Suppressor  
- Unidirectional (A) construction  
- Plastic encapsulated TVS series for Thru Hole mounting  
- Selections for 6.5 to 170 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MLCE6.5A thru MLCE170A, e3  
FEATURES  
.
.
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Unidirectional construction. For bidirectional option see Figure 4.  
Suppresses transients up to 1500 watts @10/1000µs (see Figure 1)  
Clamps transients in less than 100 pico seconds  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote  
129 for more details on the screening options.  
.
.
Surface mount equivalent packages also available as MSMC(G/J)LCE6.5A - MSMC(G/J)LCE170A in  
separate data sheet (consult factory for other surface mount options)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
.
.
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
CASE 1  
APPLICATIONS / BENEFITS  
.
.
.
Protection from switching transients and induced RF  
Low capacitance for data line protection to 1 MHz  
Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in  
RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC 429, Part  
1, par 2.4.1.1)  
.
.
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MLCE6.5A to MLCE170A  
Class 2: MLCE6.5A to MLCE150A  
Class 3: MLCE6.5A to MLCE70A  
Class 4: MLCE6.5A to MLCE36A  
.
.
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
o
o
o
o
Class 1 : MLCE6.5A to MLCE90A  
Class 2: MLCE6.5A to MLCE45 A  
Class 3: MLCE6.5A to MLCE22A  
Class 4: MLCE6.5A to MLCE11A  
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:  
o
o
Class 2: MLCE6.5A to MLCE20A  
Class 3: MLCE6.5A to MLCE10A  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (see Figure 1) with impulse repetition  
rate of 0.01% or less* at lead temperature TL of 25°C  
.
.
Operating & Storage Temperatures: -65 ºC to +150 ºC  
Thermal Resistance: 22 ºC/W junction to lead at 3/8 inch (10 mm) from body, or 82 ºC/W junction to  
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz), track width 1 mm, length 25mm  
.
.
Steady-State Power dissipation*: 5 watts at TL = 40 ºC, or 1.52 watts at TA = 25 ºC when mounted on  
FR4 PC board described for thermal resistance  
Solder Temperatures: 260 ºC for 10 s (maximum)  
* TVS devices are not typically used for dc power dissipation and are instead operated at ≤ VWM except for transients that briefly  
drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 3 and 4 for further protection  
details in rated peak power for unidirectional and bidirectional configurations respectively.  
RF01009 Rev A, June 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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