Datasheet > ML22Q553

ML22Q553

更新时间： 2024-01-21 13:48:05

品牌	Logo	应用领域
罗姆 - ROHM		存储
页数	文件大小	规格书
72页	2015K
描述
存储器内置型

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技术参数
数据手册

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ML22Q553 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.79	内存集成电路类型：	FLASH
编程电压：	5 V	Base Number Matches：	1

ML22Q553 数据手册

FEDL22Q553-06

ML22Q553-NNN/ML22Q553-xxx

ABSOLUTE MAXIMUM RATINGS

DGND = SPGND = 0 V, Ta = 25°C

Parameter

Power supply voltage

Input voltage

Symbol

DV_DD

SPV_DD

Condition

Rating

Unit

—

−0.3 to +7.0

V_IN

—

−0.3 to DV_DD+0.3

When the LSI is mounted on

JEDEC 4-layer board.

When SPV_DD= 5V

P_D

1000

Power dissipation

Applies to all pins except

SPM, SPP, V_DDL,and V_DDR

I_OS

Output short-circuit current

Storage temperature

Applies to SPM and SPP pins.

Applies to V_DDLand V_DDRpins.

—

500

−55 to +150

°C

T_STG

RECOMMENDED OPERATING CONDITIONS

DGND = SPGND = 0 V

Parameter

DV_DD, SPV_DD

Power supply voltage

Symbol

Condition

—

Range

Unit

DV_DD

SPV_DD

4.5 to 5.5

Operating temperature

Top

—

−40 to +105

Typ.

°C

Min.

3.5

Max.

4.5

Master clock frequency

f_OSC

MHz

4.096

FLASH CONDITIONS

DGND = SPGND = 0 V

Parameter

Symbol

T_OP

Condition

Range

Unit

At write/erase

0 to +70

°C

Operating temperature

At read

―

°C

−40 to +105

Maximum rewrite count

Data retention period

C_EP

Y_DR

times

years

―

7/71

1...5 6 789 10 11...72

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