MJE16106

更新时间： 2024-11-24 22:46:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
10页	383K
描述
POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS

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MJE16106 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.8
其他特性：	LEADFORM OPTIONS ARE AVAILABLE	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	8 A	基于收集器的最大容量：	300 pF
集电极-发射极最大电压：	400 V	配置：	SINGLE
最小直流电流增益 (hFE)：	6	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
功耗环境最大值：	100 W	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	最大关闭时间（toff）：	2150 ns
VCEsat-Max：	1 V	Base Number Matches：	1

MJE16106 数据手册

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SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTORS

8 AMPERES

400 VOLTS

100 AND 125 WATTS

Switchmode Bridge Series

. . . specifically designed for use in half bridge and full bridge off line converters.

•

Excellent Dynamic Saturation Characteristics

Rugged RBSOA Capability

Collector–Emitter Sustaining Voltage — V

Collector–Emitter Breakdown — V

(BR)CES

— 400 V

CEO(sus)

— 650 V

State–of–Art Bipolar Power Transistor Design

Fast Inductive Switching:

t = 30 ns (Typ) @ 100 C

t = 65 ns (Typ) @ 100 C

= 1.3 µs (Typ) @ 100 C

•

Ultrafast FBSOA Specified

100 C Performance Specified for:

RBSOA

Inductive Load Switching

Saturation Voltages

Leakages

MAXIMUM RATINGS

Rating

Symbol

Value

400

650

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO(sus)

CES

EBO

Collector Current — Continuous

— Pulsed (1)

CASE 221A–06

TO–220AB

Base Current — Continuous

— Pulsed (1)

Adc

Total Power Dissipation @ T = 25 C

100

0.8

Watts

@ T = 100 C

Derated above 25 C

W/ C

Operating and Storage Temperature

T , T

–55 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

1.25

275

C/W

θJC

Maximum Lead Temperature for

Soldering Purposes 1/8″ from

Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola Inc.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...10

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与MJE16106相关器件

型号	品牌	获取价格	描述	数据表
MJE1610616	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16106A	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16106AF	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16106AJ	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16106AJ	ONSEMI	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE16106AK	ONSEMI	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE16106AS	ONSEMI	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE16106AU	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE16106BA	ONSEMI	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE16106BC	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu

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