Datasheet > MJE16106DW

MJE16106DW

更新时间： 2024-11-26 04:46:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
65页	487K
描述
TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJE16106DW 数据手册

SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTORS

8 AMPERES

400 VOLTS

100 AND 125 WATTS

Switchmode Bridge Series

. . . specifically designed for use in half bridge and full bridge off line converters.

•

Excellent Dynamic Saturation Characteristics

Rugged RBSOA Capability

Collector–Emitter Sustaining Voltage — V

— 400 V

CEO(sus)

— 650 V

Collector–Emitter Breakdown — V

(BR)CES

State–of–Art Bipolar Power Transistor Design

Fast Inductive Switching:

t = 30 ns (Typ) @ 100 C

t = 65 ns (Typ) @ 100 C

= 1.3 µs (Typ) @ 100 C

•

Ultrafast FBSOA Specified

100 C Performance Specified for:

RBSOA

Inductive Load Switching

Saturation Voltages

Leakages

MAXIMUM RATINGS

Rating

Symbol

Value

400

650

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO(sus)

CES

EBO

Collector Current — Continuous

— Pulsed (1)

CASE 221A–06

TO–220AB

Base Current — Continuous

— Pulsed (1)

Adc

Total Power Dissipation @ T = 25 C

100

0.8

Watts

@ T = 100 C

Derated above 25 C

W/ C

Operating and Storage Temperature

T , T

–55 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

1.25

275

C/W

θJC

Maximum Lead Temperature for

Soldering Purposes 1/8″ from

Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

REV 1

3–696

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...65

中文翻译

下载PDF

与MJE16106DW相关器件

型号	品牌	获取价格	描述	数据表
MJE16106L	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16106N	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16106S	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16106T	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16106U	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16106UA	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16106W	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16106WD	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16204	MOTOROLA	获取价格	POWER TRANSISTORS 6.0 AMPERES 550 VOLTS-. VCES 45 AND 80 WATTS
MJE1620416	MOTOROLA	获取价格	Power Bipolar Transistor, 6A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin