MJE16106T

更新时间： 2024-11-25 13:01:43

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
10页	383K
描述
8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB

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技术参数
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MJE16106T 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.82
Is Samacsys：	N	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	8 A	集电极-发射极最大电压：	400 V
配置：	SINGLE	最小直流电流增益 (hFE)：	6
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
功耗环境最大值：	100 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MJE16106T 数据手册

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by MJE16106/D

SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTORS

8 AMPERES

400 VOLTS

100 AND 125 WATTS

Switchmode Bridge Series

. . . specifically designed for use in half bridge and full bridge off line converters.

•

Excellent Dynamic Saturation Characteristics

Rugged RBSOA Capability

Collector–Emitter Sustaining Voltage — V

Collector–Emitter Breakdown — V

(BR)CES

— 400 V

CEO(sus)

— 650 V

State–of–Art Bipolar Power Transistor Design

Fast Inductive Switching:

t = 30 ns (Typ) @ 100 C

t = 65 ns (Typ) @ 100 C

= 1.3 µs (Typ) @ 100 C

•

Ultrafast FBSOA Specified

100 C Performance Specified for:

RBSOA

Inductive Load Switching

Saturation Voltages

Leakages

MAXIMUM RATINGS

Rating

Symbol

Value

400

650

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO(sus)

CES

EBO

Collector Current — Continuous

— Pulsed (1)

CASE 221A–06

TO–220AB

Base Current — Continuous

— Pulsed (1)

Adc

Total Power Dissipation @ T = 25 C

100

0.8

Watts

@ T = 100 C

Derated above 25 C

W/ C

Operating and Storage Temperature

T , T

–55 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

1.25

275

C/W

θJC

Maximum Lead Temperature for

Soldering Purposes 1/8″ from

Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola Inc.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...10

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与MJE16106T相关器件

型号	品牌	获取价格	描述	数据表
MJE16106U	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16106UA	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16106W	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16106WD	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16204	MOTOROLA	获取价格	POWER TRANSISTORS 6.0 AMPERES 550 VOLTS-. VCES 45 AND 80 WATTS
MJE1620416	MOTOROLA	获取价格	Power Bipolar Transistor, 6A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MJE1620416A	MOTOROLA	获取价格	6A, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16204A	MOTOROLA	获取价格	Power Bipolar Transistor, 6A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MJE16204AF	MOTOROLA	获取价格	6A, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16204AJ	MOTOROLA	获取价格	6A, NPN, Si, POWER TRANSISTOR, TO-220AB

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