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MJE15028BA PDF预览

MJE15028BA

更新时间： 2024-11-12 13:01:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 80K
描述
8A, 120V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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MJE15028BA 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.76Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：120 V配置：SINGLE
最小直流电流增益 (hFE)：20JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：30 MHz
Base Number Matches：1

MJE15028BA 数据手册

 浏览型号MJE15028BA的Datasheet PDF文件第2页浏览型号MJE15028BA的Datasheet PDF文件第3页浏览型号MJE15028BA的Datasheet PDF文件第4页浏览型号MJE15028BA的Datasheet PDF文件第5页浏览型号MJE15028BA的Datasheet PDF文件第6页 
MJE15028, MJE15030 (NPN)  
MJE15029, MJE15031 (PNP)  
Preferred Device  
Complementary Silicon  
Plastic Power Transistors  
These devices are designed for use as high−frequency drivers in  
audio amplifiers.  
http://onsemi.com  
Features  
8 AMPERE  
• DC Current Gain Specified to 4.0 Amperes  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
120−150 VOLTS, 50 WATTS  
h
= 40 (Min) @ I = 3.0 Adc  
FE  
C
= 20 (Min) @ I = 4.0 Adc  
C
• Collector−Emitter Sustaining Voltage −  
V
= 120 Vdc (Min); MJE15028, MJE15029  
= 150 Vdc (Min); MJE15030, MJE15031  
CEO(sus)  
• High Current Gain − Bandwidth Product  
f = 30 MHz (Min) @ I = 500 mAdc  
T
C
• TO−220AB Compact Package  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
TO−220AB  
CASE 221A−09  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
MJE15028, MJE15029  
MJE15030, MJE15031  
V
Vdc  
CEO  
1
STYLE 1  
2
120  
150  
3
Collector−Base Voltage  
MJE15028, MJE15029  
MJE15030, MJE15031  
V
Vdc  
CB  
EB  
120  
150  
MARKING DIAGRAM  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
Collector Current − Continuous  
− Peak  
I
8.0  
16  
C
I
CM  
Base Current  
I
2.0  
Adc  
B
Total Device Dissipation @ T = 25_C  
P
50  
0.40  
W
C
D
Derate above 25°C  
W/_C  
W
W/_C  
_C  
MJE150xxG  
AY WW  
Total Device Dissipation @ T = 25_C  
P
2.0  
0.016  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to  
+150  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
MJE150xx = Device Code  
x = 28, 29, 30, or 31  
R
q
JA  
62.5  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
MJE15028/D  
123456

中文翻译

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