MJE15029AF

更新时间： 2024-09-24 13:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
6页	80K
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中文翻译

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数据手册

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MJE15029AF 数据手册

MJE15028, MJE15030 (NPN)

MJE15029, MJE15031 (PNP)

Preferred Device

Complementary Silicon

Plastic Power Transistors

These devices are designed for use as high−frequency drivers in

audio amplifiers.

http://onsemi.com

Features

8 AMPERE

• DC Current Gain Specified to 4.0 Amperes

POWER TRANSISTORS

COMPLEMENTARY SILICON

120−150 VOLTS, 50 WATTS

= 40 (Min) @ I = 3.0 Adc

= 20 (Min) @ I = 4.0 Adc

• Collector−Emitter Sustaining Voltage −

= 120 Vdc (Min); MJE15028, MJE15029

= 150 Vdc (Min); MJE15030, MJE15031

CEO(sus)

• High Current Gain − Bandwidth Product

f = 30 MHz (Min) @ I = 500 mAdc

• TO−220AB Compact Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

TO−220AB

CASE 221A−09

Symbol

Value

Unit

Collector−Emitter Voltage

MJE15028, MJE15029

MJE15030, MJE15031

Vdc

CEO

STYLE 1

120

150

Collector−Base Voltage

MJE15028, MJE15029

MJE15030, MJE15031

Vdc

120

150

MARKING DIAGRAM

Emitter−Base Voltage

5.0

Vdc

Adc

Collector Current − Continuous

− Peak

8.0

Base Current

2.0

Adc

Total Device Dissipation @ T = 25_C

0.40

Derate above 25°C

W/_C

MJE150xxG

AY WW

Total Device Dissipation @ T = 25_C

2.0

0.016

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−65 to

+150

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

2.5

Unit

_C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

MJE150xx = Device Code

x = 28, 29, 30, or 31

62.5

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

= Pb−Free Package

= Assembly Location

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 4

MJE15028/D

12 3 4 5 6

中文翻译

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与MJE15029AF相关器件

型号	品牌	获取价格	描述	数据表
MJE15029AJ	ONSEMI	获取价格	8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029AK	ONSEMI	获取价格	TRANSISTOR 8 A, 120 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE15029AN	ONSEMI	获取价格	8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029AS	ONSEMI	获取价格	8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029BA	ONSEMI	获取价格	8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029BC	ONSEMI	获取价格	8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029BD	ONSEMI	获取价格	8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029BG	ONSEMI	获取价格	8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029BS	ONSEMI	获取价格	8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029C	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

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