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MJE15029C

更新时间： 2024-09-24 13:01:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
6页 220K
描述
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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MJE15029C 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.7
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：120 V配置：SINGLE
最小直流电流增益 (hFE)：20JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：PNP功耗环境最大值：50 W
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：30 MHzBase Number Matches：1

MJE15029C 数据手册

 浏览型号MJE15029C的Datasheet PDF文件第2页浏览型号MJE15029C的Datasheet PDF文件第3页浏览型号MJE15029C的Datasheet PDF文件第4页浏览型号MJE15029C的Datasheet PDF文件第5页浏览型号MJE15029C的Datasheet PDF文件第6页 
Order this document  
by MJE15028/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use as high–frequency drivers in audio amplifiers.  
•
DC Current Gain Specified to 4.0 Amperes  
h
h
= 40 (Min) @ I = 3.0 Adc  
FE  
FE  
C
= 20 (Min) @ I = 4.0 Adc  
C
*Motorola Preferred Device  
•
Collector–Emitter Sustaining Voltage —  
V
V
= 120 Vdc (Min) — MJE15028, MJE15029  
= 150 Vdc (Min) — MJE15030, MJE15031  
CEO(sus)  
CEO(sus)  
8 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
•
•
High Current Gain — Bandwidth Product  
= 30 MHz (Min) @ I = 500 mAdc  
f
T
C
TO–220AB Compact Package  
120–150 VOLTS  
50 WATTS  
MAXIMUM RATINGS  
MJE15028 MJE15030  
MJE15029 MJE15031  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
120  
120  
150  
150  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
— Peak  
I
C
8.0  
16  
Base Current  
I
B
2.0  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
50  
0.40  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.5  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
θJC  
θJA  
R
62.5  
T
T
C
A
3.0 60  
2.0 40  
T
C
T
1.0 20  
A
0
0
0
20  
40  
60  
80  
100  
C)  
120  
140  
160  
T, TEMPERATURE (  
°
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995
123456

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MJE15029D1 MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE15029DW ONSEMI

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 		8A, 120V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE15029G ONSEMI

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 		8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
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 		Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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 		8A, 120V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE15029PBFREE CENTRAL

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 		暂无描述
MJE15029T MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE15029U MOTOROLA

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 		8A, 120V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE15029U2 MOTOROLA

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 		8A, 120V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE15029UA MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

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