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MJE15029G PDF预览

MJE15029G

更新时间： 2024-09-24 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器PC局域网
页数 文件大小 规格书
6页 80K
描述
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

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中文翻译

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MJE15029G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.43
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：225702Samacsys Pin Count：3
Samacsys Part Category：TransistorSamacsys Package Category：Transistor Outline, Vertical
Samacsys Footprint Name：TO-220 CASE221A-09Samacsys Released Date：2015-11-03 12:30:39
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：120 V
配置：SINGLE最小直流电流增益 (hFE)：20
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：30 MHz
Base Number Matches：1

MJE15029G 数据手册

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MJE15028, MJE15030 (NPN)  
MJE15029, MJE15031 (PNP)  
Preferred Device  
Complementary Silicon  
Plastic Power Transistors  
These devices are designed for use as high−frequency drivers in  
audio amplifiers.  
http://onsemi.com  
Features  
8 AMPERE  
• DC Current Gain Specified to 4.0 Amperes  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
120−150 VOLTS, 50 WATTS  
h
= 40 (Min) @ I = 3.0 Adc  
FE  
C
= 20 (Min) @ I = 4.0 Adc  
C
• Collector−Emitter Sustaining Voltage −  
V
= 120 Vdc (Min); MJE15028, MJE15029  
= 150 Vdc (Min); MJE15030, MJE15031  
CEO(sus)  
• High Current Gain − Bandwidth Product  
f = 30 MHz (Min) @ I = 500 mAdc  
T
C
• TO−220AB Compact Package  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
TO−220AB  
CASE 221A−09  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
MJE15028, MJE15029  
MJE15030, MJE15031  
V
Vdc  
CEO  
1
STYLE 1  
2
120  
150  
3
Collector−Base Voltage  
MJE15028, MJE15029  
MJE15030, MJE15031  
V
Vdc  
CB  
EB  
120  
150  
MARKING DIAGRAM  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
Collector Current − Continuous  
− Peak  
I
8.0  
16  
C
I
CM  
Base Current  
I
2.0  
Adc  
B
Total Device Dissipation @ T = 25_C  
P
50  
0.40  
W
C
D
Derate above 25°C  
W/_C  
W
W/_C  
_C  
MJE150xxG  
AY WW  
Total Device Dissipation @ T = 25_C  
P
2.0  
0.016  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to  
+150  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
MJE150xx = Device Code  
x = 28, 29, 30, or 31  
R
q
JA  
62.5  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
MJE15028/D  
123456

中文翻译

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MJE15029G 替代型号

型号 品牌 替代类型 描述 数据表
MJE15029 ONSEMI

完全替代

 POWER TRANSISTORS COMPLEMENTARY SILICON
MJE15029 MOSPEC

功能相似

 POWER TRANSISTORS(8.0A,120-150V,50W)

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